EMC-SERIES ON Semiconductor, EMC-SERIES Datasheet

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EMC-SERIES

Manufacturer Part Number
EMC-SERIES
Description
Dual Common Base-collector Bias Resistor Transistors
Manufacturer
ON Semiconductor
Datasheet
EMC2DXV5T1,
EMC3DXV5T1,
EMC4DXV5T1,
EMC5DXV5T1
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 5
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
2
, − minus sign for Q
Rating
(T
A
1
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
Q1
ORDERING INFORMATION
Ux = Specific Device Code
M
G
3
4
MARKING DIAGRAM
= Date Code
= Pb−Free Package
http://onsemi.com
x = C, 3, E, or 5
5
CASE 463B
R1
R2
SOT−553
Ux M G
Publication Order Number:
2
G
R1
1
R2
EMC2DXV5T1/D
Q2
1
5

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EMC-SERIES Summary of contents

Page 1

... The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space premium ...

Page 2

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 THERMAL CHARACTERISTICS Characteristic ONE JUNCTION HEATED Total Device Dissipation T = 25°C A Derate above 25°C Thermal Resistance, Junction-to-Ambient BOTH JUNCTIONS HEATED Total Device Dissipation T = 25°C A Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1. FR− ...

Page 3

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 ELECTRICAL CHARACTERISTICS (T Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( 5.0 mA CHARACTERISTICS = 10 mA, I Collector-Base Breakdown Voltage (I C Collector-Emitter Breakdown Voltage (I = 2.0 mA Current Gain ( ...

Page 4

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat REVERSE BIAS VOLTAGE (V) R Figure 4. Output Capacitance 100 0.1 0 Figure 6. Input Voltage versus Output Current 1000 25° ...

Page 5

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat REVERSE BIAS VOLTAGE (V) R Figure 9. Output Capacitance 0 0.1 0 Figure 11. Input Voltage versus Output ...

Page 6

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR −25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat REVERSE BIAS VOLTAGE (V) R Figure 14. Output Capacitance 100 0.1 0 Figure 16 ...

Page 7

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat REVERSE BIAS VOLTAGE (V) R Figure 19. Output Capacitance 100 0.1 0 1000 25° ...

Page 8

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (V) R Figure 24. Output Capacitance 0.2 V ...

Page 9

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat SERIES REVERSE BIAS VOLTAGE (V) R Figure 30. Output Capacitance 1000 ...

Page 10

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (V) R Figure 34. Output Capacitance 100 0.1 0 Figure 36. Input Voltage versus Output Current 1000 25° ...

Page 11

... EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 D −X− −Y− 0.08 (0.003) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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