KSH13003

Manufacturer Part NumberKSH13003
DescriptionHigh Voltage Power Transistor
ManufacturerFairchild Semiconductor
KSH13003 datasheet
 
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High Voltage Power Transistor
D-PACK for Surface Mount Applications
• High speed Switching
• Suitable for Switching Regulator Motor Control
• Straight Lead (I.PACK, I Suffix)
• Lead Formed for Surface Mount Applications (No Suffix)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
V
(sus)
* Collector-Emitter Breakdown Voltage
CEO
I
Emitter Cut-off Current
EBO
h
* DC Current Gain
FE
V
(sat)
* Collector-Emitter Saturation Voltage
CE
V
(sat)
* Base-Emitter Saturation Voltage
BE
C
Output Capacitance
ob
f
Current Gain Bandwidth Product
T
t
Turn ON time
ON
t
Storage time
STG
t
Fall Time
F
* Pulse Test: Pulse Width=5ms, Duty Cycle 10%
©2000 Fairchild Semiconductor International
KSH13003
1
T
=25 C unless otherwise noted
C
Parameter
=25 C)
C
T
=25 C unless otherwise noted
C
Test Condition
I
= 5mA, I
= 0
C
B
V
= 9V, I
= 0
EB
C
V
= 2V, I
= 0.5A
CE
C
V
= 2V, I
= 1A
CE
C
I
= 0.5A, I
= 0.1A
C
B
I
= 1A, I
= 0.25A
C
B
I
= 1.5A, I
= 0.5A
C
B
I
= 0.5A, I
= 0.1A
C
B
I
= 1A, I
= 0.25A
C
B
V
= 10V, f = 0.1MHz
CB
V
= 10V, I
= 0.1A
CE
C
V
= 125V, I
= 1A
CC
C
I
1 = 0.2A, I
2 = - 0.2A
B
B
D-PAK
I-PAK
1
1.Base
2.Collector
3.Emitter
Value
Units
700
V
400
V
9
V
1.5
A
3
A
0.75
A
40
W
150
C
- 65 ~ 150
C
Min.
Typ.
Max.
Units
400
V
10
A
8
40
5
0.5
V
1
V
3
V
1
V
1.2
V
21
pF
4
MHz
1.1
s
4.0
s
0.7
s
Rev. A, February 2000

KSH13003 Summary of contents

  • Page 1

    ... Current Gain Bandwidth Product T t Turn ON time ON t Storage time STG t Fall Time F * Pulse Test: Pulse Width=5ms, Duty Cycle 10% ©2000 Fairchild Semiconductor International KSH13003 1 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 5mA ...

  • Page 2

    ... BE(sat) V CE(sat) 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 I MAX. (PLUSE MAX.(DC 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 100 =0mA B 0.1 3.5 4.0 4.5 5 0.1 0. ...

  • Page 3

    ... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A, February 2000 ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...