FDH20N40 Fairchild Semiconductor, FDH20N40 Datasheet

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FDH20N40

Manufacturer Part Number
FDH20N40
Description
20a, 400v, 0.216 Ohm, N-channel Smps Power Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDH20N40
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2002 Fairchild Semiconductor Corporation
(FLANGE)
DRAIN
FDH20N40 / FDP20N40
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
P
T
D
DSS
GS
D
J
Package
, T
Symbol
R
R
R
R
STG
CS
JC
JA
JA
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink, Flat, Greased Surface
Thermal Resistance Junction to Ambient (TO-247)
Thermal Resistance Junction to Ambient (TO-220)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw
JEDEC TO-247
C
C
= 25
= 100
o
C
Parameter
o
C, V
o
SOURCE
C, V
GS
GS
DRAIN
= 10V)
T
= 10V)
C
= 25°C unless ot herwise noted
GATE
(FLANGE)
DRAIN
Features
• Low Gate Charge Q
• Improved Gate, Avalanche and High Reapplied dv/dt
• Reduced r
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rat ed Junction Temperature
Requirement
Ruggedness
JEDEC TO-220AB
300 (1.6mm from case)
DS(ON)
10ibf*in (1.1N*m)
-55 to 175
Ratings
1.82
400
273
20
14
80
30
SOURCE
DRAIN
g
GATE
results in Simple Drive
0.55
0.24
40
62
Symbol
October 2002
FDH20N40 / FDP20N40 Rev. A,
G
Units
W/
D
S
o
o
W
V
V
A
A
A
C
C
o
o
o
o
o
C
C/W
C/W
C/W
C/W

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FDH20N40 Summary of contents

Page 1

... C Parameter 10V 10V) GS October 2002 results in Simple Drive g DS(ON) Symbol D SOURCE DRAIN GATE G S Ratings Units 400 273 W 1. -55 to 175 o 300 (1.6mm from case) 10ibf*in (1.1N*m) 0.55 0. FDH20N40 / FDP20N40 Rev C/W o C/W o C/W o C/W ...

Page 2

... SD SD Tape Width Quantity - Min Typ Max Units 400 - - 0.200 0.216 2.0 3.5 4 µ 250 - - ±100 1840 - pF - 245 - 1100 - - 0.9 1 351 456 ns - 4.5 5.85 µC FDH20N40 / FDP20N40 Rev. A ...

Page 3

... DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V - 100 125 JUNCTION TEMPERATURE ( 20A 200V 320V 80V GATE CHARGE (nC) g Gate Current FDH20N40 / FDP20N40 Rev. A 100 = 10A D 150 175 60 ...

Page 4

... CASE TEMPERATURE (° RECTANGULAR PULSE DURATION (s) 1 100 s 1ms 10ms 100 V , DRAIN TO SOURCE VOLTAGE (V) DS 150 175 DUTY FACTOR PEAK FDH20N40 / FDP20N40 Rev 1000 ...

Page 5

... Figure 14. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 16. Switching Time Waveform BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDH20N40 / FDP20N40 Rev 10V 90% ...

Page 6

... TM 2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS ...

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