1N648-1

Manufacturer Part Number1N648-1
DescriptionSilicon Switching Diode Do-35 Glass Package
ManufacturerMicrosemi Corporation
1N648-1 datasheet
 


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1N648-1
D
D
ESIGN
ATA
Case: Hermetically sealed glass package
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Marking: Blue body coat, Black digits.
Polarity: Cathode end is banded.
WWW.MICROSEMI.COM
F
EATURES
• 1N648-1
• S
R
ILICON
ECTIFIER
• M
B
ETALLURGICALLY
ONDED
• H
S
ERMETICALLY
EALED
• D
P
C
OUBLE
LUG
ONSTRUCTION
25 °C
M
R
AXIMUM
ATINGS AT
Operating Temperature:
-65°C to +175°C
Storage Temperature:
-65°C to +175°C
Surge Current A, sine 8.3mS:
5.0A
Total Power Dissipation:
500mW
Operating Current:
400mA, T
Operating Current:
150mA, T
Derating Factor:
2mA/°C above +25°C
Derating Factor:
6mA/°C above +150°C
D.C. Reverse Voltage (VRWM):
500V
DC E
C
LECTRICAL
HARACTERISTICS
V
F
Ambient
Ambient
I
Min
Max
F
(°C)
mA
V
V
(°C)
25
400
0.80
1.00
AC E
C
LECTRICAL
HARACTERISTICS AT
Symbol
Capacitance @ V
= 4V
pF
R
,
I
G
R
E
RELAND -
ORT
OAD
NNIS,
PHONE:
TOLL FREE:
FAX:
U.S.A. D
S
C
OMESTIC
ALES
ONTACT
PHONE:
TOLL FREE:
= +25°C
A
= +150°C
A
I
R
V
Min
Max
R
V (dc)
µA
µA
25
500
-
0.050
25
600
-
50
25°C
Min
Max
-
20
C
C
O.
LARE
+353 65 6840044
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