1N648-1 Microsemi Corporation, 1N648-1 Datasheet

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1N648-1

Manufacturer Part Number

1N648-1

Description

Silicon Switching Diode Do-35 Glass Package

Manufacturer

Microsemi Corporation

Datasheet

1.1N648-1.pdf (1 pages)

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D

Case: Hermetically sealed glass package

Lead Material: Copper clad steel

Lead Finish: Tin/Lead

Marking: Blue body coat, Black digits.

Polarity: Cathode end is banded.

ESIGN

WWW.MICROSEMI.COM

1N648-1

D

ATA

M

Operating Temperature:

Storage Temperature:

Surge Current A, sine 8.3mS:

Total Power Dissipation:

Operating Current:

Operating Current:

Derating Factor:

Derating Factor:

D.C. Reverse Voltage (VRWM):

DC E

AC E

F

• 1N648-1

• S

• M

• H

• D

Capacitance @ V

Ambient

EATURES

AXIMUM

(°C)

25

ILICON

OUBLE

ERMETICALLY

ETALLURGICALLY

LECTRICAL

LECTRICAL

I

U.S.A. D

RELAND -

400

mA

R

P

I

R

F

LUG

ECTIFIER

V

ATINGS AT

OMESTIC

R

F

= 4V

G

C

0.80

ORT

ONSTRUCTION

S

Min

C

C

V

EALED

HARACTERISTICS

HARACTERISTICS AT

B

R

S

PHONE:

TOLL FREE:

FAX:

PHONE:

TOLL FREE:

ONDED

Symbol

OAD

ALES

1.00

Max

pF

25 °C

V

,

E

C

NNIS,

ONTACT

500mW

-65°C to +175°C

-65°C to +175°C

5.0A

400mA, T

150mA, T

2mA/°C above +25°C

6mA/°C above +150°C

500V

Ambient

(°C)

25

25

C

Min

O.

-

+353 65 6840044

+186 62 702434

+353 65 6822298

(617) 926 0404

1 800 666 2999

C

A

A

= +25°C

LARE

= +150°C

V (dc)

500

600

V

Max

25°C

R

20

I

R

Min

µA

-

-

0.050

Max

µA

50

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