DF5A5.6FU TOSHIBA Semiconductor CORPORATION, DF5A5.6FU Datasheet
DF5A5.6FU
Manufacturer Part Number
DF5A5.6FU
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF5A5.6FU.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF5A5.6FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
Absolute Maximum Ratings
Electrical Characteristics
Guaranteed Level of ESD Immunity
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
Criterion: No damage to device elements
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Power dissipation
Junction temperature
Storage temperature range
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(Contact discharge)
Test Condition
Characteristic
Characteristic
IEC61000-4-2
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
DF5A5.6FU
Symbol
Symbol
T
ESD Immunity Level
V
Z
C
I
T
P
stg
R
Z
Z
T
j
± 30 kV
I
I
V
V
Z
Z
R
R
= 5 mA
= 5 mA
= 2.5 V
= 0, f = 1 MHz
−55~125
Rating
200
125
1
Test Condition
Unit
mW
°C
°C
Weight: 0.0062 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
5.3
―
―
―
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Typ.
5.6
65
―
―
DF5A5.6FU
1-2V1B
⎯
⎯
2007-11-01
Max
6.0
1.0
40
―
Unit: mm
Unit
μA
pF
Ω
V
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DF5A5.6FU Summary of contents
Page 1
... 2 MHz T R ESD Immunity Level ± DF5A5.6FU Unit: mm 1.CATHODE 1 2. ANODE 3.CATHODE2 4.CATHODE3 5.CATHODE4 ⎯ JEDEC ⎯ JEITA TOSHIBA 1-2V1B Weight: 0.0062 g (typ.) Min Typ. Max Unit 5.3 5.6 6.0 Ω ― ...
Page 2
... Marking Equivalent Circuit 5 100 Ta=25° 0.1 0.01 0 0.001 ZENER VOLTAGE VZ (V) (Top View) 100 DF5A5.6FU Ta=25°C f=1MHz REVERSE VOLTAGE VR (V) 2007-11- ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF5A5.6FU 20070701-EN 2007-11-01 ...