PRLL5817 NXP Semiconductors, PRLL5817 Datasheet

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PRLL5817

Manufacturer Part Number
PRLL5817
Description
Schottky Barrier Diodes
Manufacturer
NXP Semiconductors
Datasheet

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PRLL5817
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NXP
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PRLL5817
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PHILIPS
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Product specification
Supersedes data of 1996 May 03
DATA SHEET
fpage
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
M3D121
DISCRETE SEMICONDUCTORS
1999 Apr 22

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PRLL5817 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of 1996 May 03 1999 Apr 22 ...

Page 2

... Hermetically sealed glass SMD package. APPLICATIONS Low power, switched-mode power supplies Rectifying Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages TM(1) incorporating Implotec technology. (1) Implotec is a trademark of Philips. ...

Page 3

... RWM PRLL5817 PRLL5818 PRLL5819 I average forward current F(AV) I non-repetitive peak forward current FSM T storage temperature stg T junction temperature j 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 CONDITIONS amb half sine wave prior to surge max R 3 Product specification MIN. MAX. ...

Page 4

... PRLL5817 PRLL5818 PRLL5819 Note 1. Pulse test 300 s; = 0.02. p THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Refer to SOD87 standard mounting conditions. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 CONDITIONS see Fig 0 see Fig 0 ...

Page 5

... Fig.2 Typical forward voltage F(AV) (W) 0 Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV). 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 MBE634 ( 2 Product specification 1.57 1.42 1 1.5 I F(AV) (A) MBE642 ...

Page 6

... PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV F(AV) (W) 0 Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV). 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 2.5 2 1.57 0 2.5 2 1.57 0 Product specification 1.42 1 1.5 I F(AV) (A) 1 ...

Page 7

... V R (V) 40 Fig.9 7 Product specification V RWM 0.5 = 0.2 0 (W) 0. (V) PRLL5817. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. V RWM 0.5 = 0.2 0 (W) 0. (V) PRLL5818. Reverse power dissipation as a function of reverse voltage (max. values); ...

Page 8

... 100 Fig.10 PRLL5819. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 MBE637 0.1 V RWM = 0 (W) 0. (V) 20 Fig.11 PRLL5819. Reverse power dissipation Product specification ...

Page 9

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 k (2) L ...

Page 10

... Philips Semiconductors Schottky barrier diodes 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 NOTES 10 Product specification ...

Page 11

... Philips Semiconductors Schottky barrier diodes 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 NOTES 11 Product specification ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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