IRF7530 International Rectifier Corp., IRF7530 Datasheet
IRF7530
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IRF7530 Summary of contents
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Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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1MHz iss rss 1600 oss iss 1200 800 400 C oss C ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...
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Id = 5.0A 0.02 0.01 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage ( V ) Fig 12. On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0. 6.0 7.0 I Fig 13. On-Resistance ...
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Micro8 Package Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...
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Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ...