IRF7506 International Rectifier Corp., IRF7506 Datasheet
IRF7506
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IRF7506 Summary of contents
Page 1
... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . This Parameter @ -10V GS @ -10V 9.1268F IRF7506 ® HEXFET Power MOSFET DSS ...
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... IRF7506 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... G S Fig 3. Typical Transfer Characteristics -3 Fig 2. Typical Output Characteristics IRF7506 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V 20 µ LSE W IDTH 0° rain-to-S ource V oltage (V ) ...
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... IRF7506 1MH iss Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° ...
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... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient V 10 D.U. 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7506 D.U. -10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit t t d(on Fig 10b ...
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... IRF7506 D.U. Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled controlled by Duty Factor "D" ...
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... (. (. IRF7506 ...
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... IRF7506 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches TLIN -48 1 & EIA- 541 . NTRO L LIN NSIO N : MILL IM ETE LLIN SIO ILL ...