IRF7506

Manufacturer Part NumberIRF7506
DescriptionHexfet Power Mosfet
ManufacturerInternational Rectifier Corp.
IRF7506 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (104Kb)Embed
Next
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance Ratings
Parameter
R
Maximum Junction-to-Ambient
JA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
S 1
G 1
S 2
G 2
This
Parameter
@ -10V
GS
@ -10V
GS
PD - 9.1268F
IRF7506
®
HEXFET
Power MOSFET
1
8
D1
V
DSS
2
7
D1
3
6
D2
4
5
D2
R
DS(on)
T o p V iew
MICRO8
Max.
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
-55 to + 150
Typ.
Max.
–––
100
= -30V
= 0.27
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
8/25/97

IRF7506 Summary of contents

  • Page 1

    ... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . This Parameter @ -10V GS @ -10V 9.1268F IRF7506 ® HEXFET Power MOSFET DSS ...

  • Page 2

    ... IRF7506 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... G S Fig 3. Typical Transfer Characteristics -3 Fig 2. Typical Output Characteristics IRF7506 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V 20 µ LSE W IDTH 0° rain-to-S ource V oltage (V ) ...

  • Page 4

    ... IRF7506 1MH iss Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° ...

  • Page 5

    ... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient V 10 D.U. 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7506 D.U. -10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit t t d(on Fig 10b ...

  • Page 6

    ... IRF7506 D.U. Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled controlled by Duty Factor "D" ...

  • Page 7

    ... (. (. IRF7506 ...

  • Page 8

    ... IRF7506 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches TLIN -48 1 & EIA- 541 . NTRO L LIN NSIO N : MILL IM ETE LLIN SIO ILL ...