SI4483EDY Vishay, SI4483EDY Datasheet

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SI4483EDY

Manufacturer Part Number
SI4483EDY
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4483EDY-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4483EDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4483EDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72862
S-71598-Rev. C, 30-Jul-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free)
(V)
G
S
S
S
1
2
3
4
0.0085 at V
0.014 at V
Top View
r
DS(on)
SO-8
J
a
= 150 °C)
a
GS
GS
(Ω)
= - 4.5 V
= - 10 V
P-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
Steady State
Steady State
- 14
- 11
T
T
T
T
t ≤ 10 sec
(A)
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• ESD Protection: 3000 V
• Notebook PC
Symbol
Symbol
T
R
R
J
- Load Switch
- Adapter Switch
G
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
7100 Ω
®
Power MOSFET
P-Channel
Typical
10 sec
- 2.7
- 14
- 11
3.0
1.9
33
70
16
- 55 to 150
± 25
- 30
- 50
D
S
Steady State
Maximum
- 1.36
0.95
- 10
1.5
- 8
42
85
21
Vishay Siliconix
Si4483EDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI4483EDY Summary of contents

Page 1

... Top View Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4483EDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... 0.1 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72862 S-71598-Rev. C, 30-Jul- °C J 0.8 1.0 1.2 Si4483EDY Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 1.6 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0 0.4 0.2 0.0 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µA 75 100 125 150 100 *Limited by r DS(on 0 °C C Single Pulse 0.01 0 – Drain-to-Source Voltage (V) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72862. Document Number: 72862 S-71598-Rev. C, 30-Jul- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4483EDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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