SI4913DY Vishay, SI4913DY Datasheet

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SI4913DY

Manufacturer Part Number
SI4913DY
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71997
S-61005-Rev. C, 12-Jun-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
Ordering Information: Si4913DY-T1
- 20
(V)
G
G
S
S
1
1
2
2
1
2
3
4
0.015 at V
0.019 at V
0.024 at V
Top View
SO-8
Si4913DY-T1-E3 (Lead (Pb)-free)
r
DS(on)
J
a
= 150 °C)
a
Dual P-Channel 20-V (D-S) MOSFET
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
8
7
6
5
a
D
D
D
D
1
1
2
2
a
A
New Product
I
= 25 °C, unless otherwise noted
D
- 9.4
- 8.4
- 7.5
Steady State
Steady State
T
T
T
T
t ≤ 10 sec
(A)
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Advanced High Cell Density Process
• Load Switching
Symbol
Symbol
T
G
R
R
J
V
V
I
P
, T
1
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
P-Channel MOSFET
D
S
®
1
1
Power MOSFET
Typical
10 sec
- 9.4
- 7.5
- 1.7
2.0
1.3
45
85
26
- 55 to 150
- 20
- 30
± 8
Steady State
G
Maximum
2
- 7.1
- 5.7
- 0.9
62.5
110
1.1
0.7
35
P-Channel MOSFET
Vishay Siliconix
Si4913DY
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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SI4913DY Summary of contents

Page 1

... Top View Ordering Information: Si4913DY-T1 Si4913DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4913DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71997 S-61005-Rev. C, 12-Jun °C J 0.8 1.0 1.2 1.4 Si4913DY Vishay Siliconix 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source V oltage (V) DS Capacitance 1 ...

Page 4

... Si4913DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.4 0 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 500 µA 75 100 125 150 100 r Limited DS(on D(on) 1 Limited °C A 0.1 Single Pulse BV Limited DSS 0.01 0 Drain-to-Source Voltage (V) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71997. Document Number: 71997 S-61005-Rev. C, 12-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4913DY Vishay Siliconix - 1 1 www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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