SI4943CDY Vishay, SI4943CDY Datasheet

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SI4943CDY

Manufacturer Part Number
SI4943CDY
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4943CDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4943CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4943CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4943CDY-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 69985
S-80638-Rev. A, 24-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free)
DS
- 20
(V)
G
G
S
S
1
1
2
2
C
0.0330 at V
0.0192 at V
= 25 °C.
1
2
3
4
R
DS(on)
Top View
GS
SO-8
GS
(Ω)
= - 4.5 V
= - 10 V
J
= 150 °C)
b, d
Dual P-Channel 20-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
D
1
1
2
2
(A)
- 8
- 8
a, e
A
= 25 °C, unless otherwise noted
Q
g
Steady State
(Typ.)
20
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Load Switching
• Battery Switching
- Computer
- Game Systems
- 2-Cell Li-Ion
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
I
P
, T
I
DM
SM
I
AS
DS
GS
AS
D
S
D
g
stg
and UIS Tested
®
G
Power MOSFET
1
Typical
P-Channel MOSFET
50
30
Limit
S
D
1
1
- 50 to 150
- 8
- 6.7
- 1.7
1.28
Limit
± 20
- 2.5
Maximum
- 20
- 30
- 30
- 11
2
- 8
- 8
3.1
b, c, e
b, c
6
2
e
e
b, c
b, c
b, c
62.5
Vishay Siliconix
40
G
Si4943CDY
2
P-Channel MOSFET
www.vishay.com
D
S
°C/W
2
2
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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SI4943CDY Summary of contents

Page 1

... Top View Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Sorce-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4943CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product 3000 2400 1800 1200 600 1.5 1 1.1 DS 0.9 0 Si4943CDY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.5 2.3 2 1.9 1.7 1.5 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.04 0.03 0. °C J 0.01 0.9 1.2 100 = 250 µA 75 100 125 150 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4943CDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 - Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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