SI4900DY Vishay, SI4900DY Datasheet

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SI4900DY

Manufacturer Part Number
SI4900DY
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4900DY
Manufacturer:
MOT
Quantity:
5 000
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4900DY-T1-E3
Quantity:
39 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73272
S-80578-Rev. D, 17-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
60
(V)
Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free)
G
G
S
S
C
1
1
2
2
= 25 °C.
0.072 at V
0.058 at V
1
2
3
4
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
a, d
Dual N-Channel 60-V (D-S) MOSFET
8
7
6
5
D
D
D
D
1
1
2
2
I
D
5.3
4.7
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
g
13 nC
T
T
T
L = 0 1 mH
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• LCD TV CCFL Inverter
G
Symbol
Symbol
T
1
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
N-Channel MOSFET
D
stg
D
S
1
1
®
Power MOSFET
Typical
55
33
- 55 to 150
G
4.3
3.4
1.7
1.3
Limit
± 20
2
2
5.3
4.3
2.6
6.1
3.1
60
20
11
b, c
2
b, c
b, c
b, c
b, c
N-Channel MOSFET
Maximum
62.5
40
Vishay Siliconix
D
S
2
2
Si4900DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
RoHS
COMPLIANT
V
A
1

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SI4900DY Summary of contents

Page 1

... Top View Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4900DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73272 S-80578-Rev. D, 17-Mar-08 1.2 1.4 1.6 1.8 2 Si4900DY Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 ...

Page 4

... Si4900DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 150 100 Limited by ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73272 S-80578-Rev. D, 17-Mar-08 100 125 150 0.0001 0.001 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4900DY Vishay Siliconix 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ...

Page 6

... Si4900DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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