IRLMS6702 International Rectifier Corp., IRLMS6702 Datasheet

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IRLMS6702

Manufacturer Part Number
IRLMS6702
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number:
IRLMS6702
Manufacturer:
IR
Quantity:
429 000
Part Number:
IRLMS6702
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLMS6702TR
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IR
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Part Number:
IRLMS6702TRPBF
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IR
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20 000
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Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
www.irf.com
θ
®
power MOSFETs are well known for,
R
®
power MOSFET with R
®
power MOSFETs from

DS(on)
DS(on)
G
D
D
1
3
2
Top View
HEXFET
6
5
4
IRLMS6702
D
S
D
A
Micro6
®
R
Power MOSFET
DS(on)
V
DSS
= -20V
= 0.20Ω
mW/°C
1

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IRLMS6702 Summary of contents

Page 1

... It's unique thermal design and R reduction enables a current-handling increase of nearly 300% compared to the SOT-23. θ www.irf.com HEXFET Top View DS(on) DS(on)  ‚ „ IRLMS6702 ® Power MOSFET -20V DSS 0.20Ω DS(on) Micro6 mW/°C 1 ...

Page 2

  ‚ ≤ ≤ ≤ ƒ ≤ ≤ „ ƒ Ω ƒ ƒ Ω Ω, ƒ G ƒ ƒ ≤ ≤ www.irf.com D S ...

Page 3

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM -1.75V 10 1 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS 100 10 T ...

Page 4

1MHz iss rss oss ds gd 300 C iss C oss 200 C rss 100 ...

Page 5

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. -3mA Current Sampling Resistors 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 ...

Page 6

Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For P-channel HEXFET 6 + • • ƒ • - „ • • • P.W. ...

Page 7

ä 3.00 (.118 ) -B- 2.80 (.111 ) 1.75 (.068 ) 3.00 (.118 ) 1.50 (.060 ) 2.60 (.103 ) - 0.95 ( .0375 ) 0.50 (.019 ) 6X 2X 0.35 (.014 ) 0.15 ...

Page 8

NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 8 8mm FEED DIRECTION 9.90 ( .390 ) 8.40 ( .331 ...

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