SUB85N04-03 Vishay, SUB85N04-03 Datasheet
SUB85N04-03
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SUB85N04-03 Summary of contents
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... 0 (TO-263 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB85N04-03 Vishay Siliconix N-Channel MOSFET Limit Unit 240 75 280 mJ c 250 W W 3.75 –55 to 175 ...
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... SUP/SUB85N04-03 Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... C 0.006 125 C 0.004 0.002 0 80 100 SUP/SUB85N04-03 Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUP/SUB85N04-03 Vishay Siliconix On-Resistance vs. Junction Temperature 1 1.2 0.8 0.4 0 –50 – 100 T – Junction Temperature ( C) J Avalanche Current vs. Time 1000 100 150 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com FaxBack 408-970-5600 2-4 New Product Source-Drain Diode Forward Voltage ...
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... Document Number: 71124 S-00654—Rev. B, 27-Mar-00 New Product 1000 100 10 1 0.1 150 175 0 –2 – Square Wave Pulse Duration (sec) SUP/SUB85N04-03 Vishay Siliconix Safe Operating Area 10 s 100 s Limited DS(on 100 Single Pulse 1 10 100 – ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...