SUB75N05-07 Vishay, SUB75N05-07 Datasheet
SUB75N05-07
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SUB75N05-07 Summary of contents
Page 1
... 0 25_C (TO-263 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB75N05-07 Vishay Siliconix N-Channel MOSFET Limit Unit 55 V "20 a "75 " "240 "60 180 mJ c 158 W W 3.7 –55 to 175 ...
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... SUP/SUB75N05-07 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance ...
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... SUP/SUB75N05-07 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C –55_C – Gate-to-Source Voltage ( 4 100 I – Drain Current (A) ...
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... SUP/SUB75N05-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature (_C) J Avalanche Current vs. Time 300 100 I ( 25_C ( 150_C 0.0001 0.001 0.01 t (Sec) in www.vishay.com S FaxBack 408-970-5600 ...
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... Safe Operating Area 300 Limited by r DS(on) 100 25_C C Single Pulse 1 0.1 1 150 175 V – Drain-to-Source Voltage (V) DS –3 – Square Wave Pulse Duration (sec) SUP/SUB75N05-07 Vishay Siliconix 10 ms 100 100 100 – www.vishay.com S FaxBack 408-970-5600 2-5 ...