SI1013R Vishay, SI1013R Datasheet

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SI1013R

Manufacturer Part Number
SI1013R
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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SI1013R
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Notes
a.
b.
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (diode conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board.
DS
–20
(V)
a
J
b
b
1.6 @ V
2.7 @ V
1.2 @ V
= 150_C)
for SC-75
for SC-89
Parameter
r
DS(on)
_
GS
GS
GS
b
= –2.5 V
= –1.8 V
= –4.5 V
(W)
P-Channel 1.8-V (G-S) MOSFET
G
S
b
1
2
SC-75A or SC-89
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
Top View
T
T
T
T
T
T
I
A
A
A
A
A
A
D
New Product
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
–350
–300
–150
3
(mA)
_
D
Symbol
T
ESD
V
V
J
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
Ordering Information:
SC-75A (SOT– 416):
Si1013R–Marking Code : D
SC-89 (SOT– 490):
Si1013X–Marking Code: B
D Drivers: Relays, Solenoids, Lamps,
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
Hammers, Displays, Memories
5 secs
–400
–300
–275
175
275
160
90
–55 to 150
–1000
2000
–20
"6
Steady State
Vishay Siliconix
–350
–275
–250
150
250
140
80
Si1013R/X
www.vishay.com
Unit
mW
mA
_C
V
V
1

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SI1013R Summary of contents

Page 1

... D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation SC-75A or SC-89 Ordering Information: 1 SC-75A (SOT– 416): Si1013R–Marking Code : SC-89 (SOT– 490): Si1013X–Marking Code Top View _ Symbol ...

Page 2

... Si1013R/X Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... V – Source-to-Drain Voltage (V) SD Document Number: 71167 S-02464—Rev. A, 25-Oct-00 New Product 4 800 1000 1.2 1.4 1.6 = –55_C 1.0 1.2 1.4 Si1013R/X Vishay Siliconix Capacitance 120 100 C iss oss 20 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si1013R/X Vishay Siliconix Threshold Voltage Variance vs. Temperature 0 0.1 –0.0 –0.1 –0.2 –0.3 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 4 New Product _ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 75 100 125 BV vs. Temperature ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71167 S-02464—Rev. A, 25-Oct-00 New Product _ –2 – Square Wave Pulse Duration (sec) Si1013R/X Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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