SUM110P04-05 Vishay, SUM110P04-05 Datasheet

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SUM110P04-05

Manufacturer Part Number
SUM110P04-05
Description
P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110P04-05
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SUM110P04-05-E3
Manufacturer:
VISHAY
Quantity:
3 000
Company:
Part Number:
SUM110P04-05-E3
Quantity:
30
Company:
Part Number:
SUM110P04-05-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
- 40
(V)
Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)
0.005 at V
G
Top View
TO-263
D
r
DS(on)
S
GS
(Ω)
J
= - 10 V
= 175 °C)
b, d
Drain Connected to Tab
P-Channel 40-V (D-S) MOSFET
I
D
- 110
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
185 nC
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFET
Typical
0.33
8
- 55 to 175
G
10.5
- 110
- 110
Limit
39
33
10
15
± 20
- 40
240
110
281
375
262
260
P-Channel MOSFET
75
b, c
b, c
b, c
b, c
b, c
a
a
SUM110P04-05
Maximum
S
D
0.4
10
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SUM110P04-05 Summary of contents

Page 1

... DS(on) 0.005 TO-263 Drain Connected to Tab Top View Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... SUM110P04-05 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 73493 S-80274-Rev. B, 11-Feb- 1.5 2.0 16000 14000 12000 10000 80 100 120 160 200 240 SUM110P04-05 Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1 0.9 0.7 0.5 0.3 0.1 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 100 125 150 175 1000 Limited ...

Page 5

... S-80274-Rev. B, 11-Feb-08 100 125 150 175 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUM110P04-05 Vishay Siliconix 400 350 300 250 200 150 100 50 0 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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