SI3457BDV Vishay, SI3457BDV Datasheet

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SI3457BDV

Manufacturer Part Number
SI3457BDV
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 72019
S-40424—Rev. D, 15-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−30
−30
(V)
J
ti
Ordering Information: Si3457BDV-T1
Marking Code:
3 mm
t A bi
0.100 @ V
0.054 @ V
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
Top View
TSOP-6
2.85 mm
GS
Si3457BDV-T1—E3 (Lead Free)
7Bxxx
GS
a
a
= −4.5 V
= −10 V
(W)
P-Channel 30-V (D-S) MOSFET
6
5
4
a
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
I
A
A
A
A
D
−5.0
−3.7
= 25_C
= 70_C
= 25_C
= 70_C
(A)
(3) G
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
P-Channel MOSFET
(1, 2, 5, 6) D
(4) S
Typical
5 secs
−5.0
−4.0
−1.7
2.0
1.3
53
90
25
−55 to 150
"20
−30
−20
Steady State
Maximum
Vishay Siliconix
−0.95
−3.7
−3.0
1.14
0.73
62.5
110
36
Si3457BDV
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI3457BDV Summary of contents

Page 1

... GS −30 −30 0.100 @ V = −4 TSOP-6 Top View 2.85 mm Ordering Information: Si3457BDV-T1 Si3457BDV-T1—E3 (Lead Free) Marking Code: 7Bxxx ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si3457BDV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72019 S-40424—Rev. D, 15-Mar- 25_C J 1.0 1.2 1.4 Si3457BDV Vishay Siliconix Capacitance 1000 800 C iss 600 400 C oss 200 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.6 V ...

Page 4

... Si3457BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 100 125 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72019 S-40424—Rev. D, 15-Mar-04 −2 − Square Wave Pulse Duration (sec) Si3457BDV Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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