MA4AGSW1A Tyco Electronics, MA4AGSW1A Datasheet

MA4AGSW1A

Manufacturer Part Number

MA4AGSW1A

Description

Algaas Spst Non-reflective Pin Diode Switch

Manufacturer

Tyco Electronics

Datasheet

1.MA4AGSW1A.pdf (8 pages)

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Bonase Electronics (HK) Co., Limited

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MA4AGSW1A

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AlGaAs SPST Non-Reflective

PIN Diode Switch

Features

Description

M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide

anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs

anodes, which utilize M/A-COM’s patent pending hetero-junction

technology, which produce less loss than conventional GaAs

processes, as much as 0.3 dB reduction in insertion loss at 50 GHz.

These devices are fabricated on a OMCVD eptaxial wafer using a

process designed for high device uniformity and extremely low

parasitics. The diodes themselves exhibit low series resistance, low

capacitance, and fast switching speed. They are fully passivated

with silicon nitride and have an additional layer of a polymer for

scratch protection. The protective coating prevents damage to the

junction and the anode airbridges during handling. Off-chip bias

circuitry is required and allows maximum design flexibility.

Applications

The output port of this device (J2), is 50 Ohms terminated during

Isolation mode, which allows the signal to be absorbed rather than

reflected back. This technique makes it ideal for instrumentation

and radar applications.

The low capacitance of the PIN diodes used makes it ideal for use

in lower loss and higher isolation microwave and millimeter wave

switch designs. The lower series resistance of the AlGaAs diodes

reduces the total insertion loss and distortion of the devices. These

AlGaAs PIN switches are used as the switching arrays for radar

systems, radiometers, and other multi-function components.

Ultra Broad Bandwidth: 18 GHz to 50 GHz

Functional Bandwidth : 10 GHz to 70 GHz

1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz

M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology

Silicon Nitride Passivation

Polymide Scratch protection

1. Exceeding any of these values may result in permanent

MA4AGSW1A Layout

Absolute Maximum Ratings

@ TA = +25 °C (Unless otherwise

specified)

Nominal Chip Dimensions

Note: Bond pads are 120 m x 120 m

Length ( Y )

Width ( X )

damage

Operating Temperature

Storage Temperature

Incident C.W. RF Power

Reverse Voltage

Bias Current

Parameter

Pad Locations Relative to J1

Chip Dimensions

X ( m)

Pad Locations

1810

1650

+750

-750

Maximum Rating

-55 °C to +125 °C

-65 °C to +150 °C

+ 23 dBm C.W.

+/- 30 mA

Y ( m)

+1240

25 V

+825

71.3

65.0

mil

V 1.00

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MA4AGSW1A Summary of contents

Page 1

... Polymide Scratch protection Description M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. ...

Page 2

... V @ J1, and J1, and J1, and + and @ + and @ GHz MA4AGSW1A Spec’s Comments 1 GHz GHz Insertion Loss State GHz Insertion Loss State 30 dB ...

Page 3

... Visit www.macom.com for additional data sheets and product information. 0.0 -0.5 -1.0 (dB) -1.5 INSERTION LOSS -2.0 -2.5 -3 -10 ISOLATION -20 -30 -40 (dB) -50 -60 -70 - MA4AGSW1A freq, GHz freq, n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1. ...

Page 4

... OUTPUT RETURN LOSS -5 INSERTION LOSS STATE -10 -15 -20 (dB) -25 -30 -35 -40 -45 - freq, GHz MA4AGSW1A North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 4 ...

Page 5

... Visit www.macom.com for additional data sheets and product information. 0 OUTPUT RETURN LOSS -5 ISOLATION STATE -10 -15 -20 (dB) -25 -30 -35 -40 -45 - MA4AGSW1A freq, GHz n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 5 ...

Page 6

... Visit www.macom.com for additional data sheets and product information. Dimensions mm Dim Min. Max. Min. A 1.14 1.17 44.7 B 0.94 0.97 37.1 C 0.26 0.28 10.2 D 0.58 0.59 22.9 E 0.44 0.45 17.4 F 0.51 0.53 20.2 G 0.96 0.98 37.8 H 0.08 0.11 3.0 Thickness 0.09 0.11 3.7 n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 MA4AGSW1A V 1.00 mils Max. 45.9 38.3 11.0 23.3 17.8 21.0 38.6 4.1 4.3 6 ...

Page 7

... Sn content. Operation of the MA4AGSW1A One External Bias Network and One External D.C Return is required for successful operation of the MA4AGSW1A Absorptive SPST AlGaAs PIN Diode Switch. The Backside Area of the Die is the RF and D.C. Return Ground Plane. ...

Page 8

... AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Schematic J1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. DC Bias 1 AlGaAs Switch Die Table I: D. Truth Table J1-J2 Low Loss: Good VSWR at J1 & ...

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