TVR20 Electronic Devices Inc., TVR20 Datasheet

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TVR20

Manufacturer Part Number
TVR20
Description
High Voltage Fast Recovery Silicon Diode For Crt Applications Type - Tvr 20
Manufacturer
Electronic Devices Inc.
Datasheet

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** See Figure 2 (over)
ELECTRICAL CHARACTERISTICS (
* Pulse rectifier service -TV deflection system, duty cycle approximately 15% of one
horizontal cycle Approximately 10 sec at a repetition rate of 15,750 Hz
This high voltage fast recovery diode was developed for assembly or encapsulation and
is intended primarily for use as a building block in the assembly of high voltage circuits
for black / white TV and similar service.
*
*
**
*
*
*
Tested in suitable dielectric medium
EDI reserves the right to change these specifications at any time without notice.
Operating Temperature
Peak Forward Current
Storage Temperature Range
Average Forward Current
Peak Reverse Voltage -
Max. Surge Current
Forward Voltage V
Reverse Current I R @ V R =20KV
Reverse Current @ T A = 100 C, I R @ V R =20KV
Reverse Recovery time (Fig.3) t rr
ABSOLUTE MAXIMUM RATINGS
HIGH VOLTAGE FAST RECOVERY
SILICON DIODE FOR CRT APPLICATIONS
TYPE - TVR 20
F
@
- Repetitive
Repetitive
I F =5mA
o
@
T
A
=25 C, Unless Otherwise indicated.)
V
o
I
I
RWM
FRM
F
(AV)max.
T
T
STG
A
max.
max.
100 nanosec max.
10uA max.
30V max.
1uA max.
-55
3A
TVR-20
20,000 Volts
o
C to +150
+100
200 mA
10 mA
o
C
o
C

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TVR20 Summary of contents

Page 1

HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE - TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high ...

Page 2

FIG.1 TYPICAL APPLIED VOLTAGE S 63.5 DC OUT AC AXIS OVERSHOOT V =DC OUT + OVERSHOOT RM FIG.3 REVERSE RECOVERY TEST METHOD 1000 N I D.U.T. 0.1 PULSE * GENERATOR - CIRCUIT *PULSE GENERATOR HP 214 A OR EQUIV. PULSE ...

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