MRF6V14300H Freescale Semiconductor, Inc, MRF6V14300H Datasheet
MRF6V14300H
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MRF6V14300H Summary of contents
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... Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 150 mA out sec, μ Operation DD Document Number: MRF6V14300H Rev. 2, 11/2008 MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 PULSED LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6V14300HR3 CASE 465A - 06, STYLE 1 ...
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... Harmonic 2nd and 3rd Spurious Response Load Mismatch Stability (VSWR = 3:1 at all Phase Angles) Load Mismatch Tolerance (VSWR = 5:1 at all Phase Angles) 1. Part internally matched both on input and output. 2. Drain efficiency is calculated by MRF6V14300HR3 MRF6V14300HSR3 2 = 25°C unless otherwise noted) C Symbol I GSS V (BR)DSS I ...
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... Z10 0.058″ x 0.254″ Microstrip Z11 0.344″ x 0.087″ Microstrip Z12 0.110″ x 0.087″ Microstrip Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values Part Chip Capacitor Chip Capacitor Chip Capacitor ...
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... Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300 Rev Device Data Freescale Semiconductor ...
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... Actual Vdc 150 mA 1400 MHz DD DQ Pulse Width = 300 μsec, Duty Cycle = 12 INPUT POWER (dBm) PULSED in Input Power 100 , OUTPUT POWER (WATTS) PULSED out Output Power MRF6V14300HR3 MRF6V14300HSR3 20 39 400 5 ...
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... Figure 9. Pulsed Output Power versus Input Power 1200 Figure 11. Broadband Performance @ MRF6V14300HR3 MRF6V14300HSR3 6 TYPICAL CHARACTERISTICS 24 25_C 22 85_C T = −30_C C 25_C 20 55_C 85_C 18 = 150 mA 1400 MHz Figure 10. Pulsed Power Gain and Drain Efficiency G ps η ...
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... W Peak DD DQ out f Z source MHz W 1200 2.70 - j4.10 2.97 - j2.66 1300 4.93 - j2.66 2.85 - j2.40 1400 7.01 - j2.87 3.17 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Z load W Output Matching Network MRF6V14300HR3 MRF6V14300HSR3 7 ...
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... B 4X (LID (FLANGE) D bbb (LID) ccc M M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF6V14300HR3 MRF6V14300HSR3 8 PACKAGE DIMENSIONS Q bbb (LID ccc (INSULATOR) aaa ...
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... Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power • Added Fig. 12, MTTF versus Junction Temperature Nov. 2008 • Changed “multiply by” symbol to “divide by” symbol in the Functional Test Drain Efficiency formula footnote Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF6V14300HR3 MRF6V14300HSR3 9 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V14300HR3 MRF6V14300HSR3 Document Number: MRF6V14300H Rev. 2, 11/2008 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...