MRF7S15100H Freescale Semiconductor, Inc, MRF7S15100H Datasheet - Page 2

no-image

MRF7S15100H

Manufacturer Part Number
MRF7S15100H
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S15100HR3
Manufacturer:
FREESCALE
Quantity:
21
Part Number:
MRF7S15100HR3
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
MRF7S15100HR5
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
MRF7S15100HSR3
Manufacturer:
HITTITE
Quantity:
8 900
Part Number:
MRF7S15100HSR3
Manufacturer:
FREESCALE
Quantity:
20 000
MRF7S15100HR3 MRF7S15100HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DD
GS
DS
DD
GS
DS
DS
DS
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
GS
GS
GS
= 174 μAdc)
= 600 mAdc, Measured in Functional Test)
= 1.74 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
= 600 mA, P
oss
rss
iss
ps
D
out
Min
1.2
0.1
5.9
18
30
2
= 23 W Avg., f = 1507.5 MHz, Single - Carrier
19.5
Typ
300
176
- 38
- 15
2.7
0.2
0.6
6.2
32
2
IC (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
- 35
2.7
3.5
0.3
10
21
- 8
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
pF
%

Related parts for MRF7S15100H