MRF7S15100H Freescale Semiconductor, Inc, MRF7S15100H Datasheet - Page 7

• Manufacturer Part Number: MRF7S15100H
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 50% Clipping, Single - Carrier Test Signal
0
Figure 9. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
2
PEAK−TO−AVERAGE (dB)
4
22
20
18
16
14
12
10
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
25
20
15
10
1150
5
0
1
V
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth
G
DD
Efficiency and ACPR versus Output Power
1250
6
ps
ACPR
Figure 8. Broadband Frequency Response
T
= 28 Vdc, I
C
= −30_C
1350 1450 1550 1650 1750 1850
Input Signal
TYPICAL CHARACTERISTICS
η
D
P
W - CDMA TEST SIGNAL
DQ
out
8
, OUTPUT POWER (WATTS) AVG.
= 600 mA, f = 1490 MHz
S11
25_C
f, FREQUENCY (MHz)
10
10
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
85_C
V
I
DQ
−100
−110
DD
−10
−20
−30
−40
−50
−60
−70
−80
−90
= 600 mA
= 28 Vdc
−9
1950 2050 2150
Figure 10. Single - Carrier W - CDMA Spectrum
85_C
S21
−7.2
25_C
−ACPR in 3.84 MHz
100
Integrated BW
−5.4
−30_C
85_C
25_C
−3.6
200
2250
MRF7S15100HR3 MRF7S15100HSR3
90
75
60
45
30
15
0
0
−5
−10
−15
−20
−25
f, FREQUENCY (MHz)
−1.8
Channel BW
3.84 MHz
0
−18
−25
−32
−39
−46
−53
−60
1.8
−ACPR in 3.84 MHz
Integrated BW
3.6
5.4
7.2
9
7