MRFE6S9046N Freescale Semiconductor, Inc, MRFE6S9046N Datasheet
MRFE6S9046N
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MRFE6S9046N Summary of contents
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... RF Device Data Freescale Semiconductor = 300 mA out ), Designed for Enhanced out = 28 Volts 285 mA Document Number: MRFE6S9046N Rev. 0, 5/2009 MRFE6S9046NR1 MRFE6S9046GNR1 920 - 960 MHz, 35 GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRFE6S9046NR1 ...
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... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRFE6S9046NR1 MRFE6S9046GNR1 2 = 300 300 mA ...
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... MHz — 0.2 — dB — 0.9 — ° — 3.1 — ns — 20 — ° — 0.021 — dB/°C — 0.006 — dBm/° Vdc 285 mA — 19 — dB — 42.5 — % — 2.1 — % rms — - 62.5 — dBc — — dBc MRFE6S9046NR1 MRFE6S9046GNR1 3 ...
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... Z7 0.892″ x 0.051″ Microstrip Z8* Z9* 0.751″ x 0.040″ Microstrip Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic — GSM EDGE Reference Design Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — GSM EDGE Reference Design Part C1 Chip Capacitors C2 2.4 pF Chip Capacitor C3 ...
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... TO270−WB 2 GHz Rev. 3 − Input Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — GSM EDGE Reference Design RF Device Data Freescale Semiconductor C10 C13 C12 C11 C8 C9 TO270−WB 2 GHz Rev. 3 − Output C14 V DS MRFE6S9046NR1 MRFE6S9046GNR1 5 ...
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... DQ 20 300 mA 19 225 mA 18 150 940 MHz OUTPUT POWER (WATTS) CW out Figure 6. Power Gain versus Output Power MRFE6S9046NR1 MRFE6S9046GNR1 6 TYPICAL CHARACTERISTICS η Vdc 35 300 mA DD out DQ IRL 925 930 935 940 ...
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... OUTPUT POWER (WATTS) out Figure 11. Spectral Regrowth at 600 kHz versus Output Power T = −30_C C 25_C 85_C Vdc out I = 300 mA DQ 910 920 930 940 950 960 f, FREQUENCY (MHz) Figure 13. Power Gain versus Frequency MRFE6S9046NR1 MRFE6S9046GNR1 970 980 25_C 50 970 980 7 ...
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... FREQUENCY (MHz) Figure 14. Broadband Frequency Response −10 −20 −30 −40 −50 −60 −70 −80 600 kHz −90 −100 −110 Center 1.96 GHz MRFE6S9046NR1 MRFE6S9046GNR1 8 TYPICAL CHARACTERISTICS −6 7 − − −24 4 −30 10 1250 ...
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... W W 820 5.03 - j7.29 7.68 - j3.45 840 4.46 - j6.69 6.97 - j3.53 860 4.00 - j6.11 6.42 - j3.20 880 3.62 - j5.64 5.98 - j2.87 900 3.29 - j5.18 5.65 - j2.52 920 3.03 - j4.75 5.40 - j2.17 940 2.80 - j4.36 5.21 - j1.82 960 2.61 - j3.99 5.09 - j1.47 980 2.46 - j3.64 5.03 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRFE6S9046NR1 MRFE6S9046GNR1 9 ...
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... INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 7.83 - j2.01 Figure 18. Pulsed CW Output Power versus Input Power @ 920 MHz MRFE6S9046NR1 MRFE6S9046GNR1 Ideal 50 49 P1dB = 47.25 dBm ( Actual ...
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... Microstrip Z7 0.708″ x 0.051″ Microstrip Z8*, Z9* 0.738″ x 0.040″ Microstrip Figure 20. MRFE6S9046NR1(GNR1) Test Circuit Schematic — Production Test Fixture Table 7. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — Production Test Fixture Part C1 Chip Capacitors C2 3.9 pF Chip Capacitor C3 ...
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... R1 C1 MRFE6S8046GN/MRFE6S9046GN Rev. 0 Figure 21. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — Production Test Fixture MRFE6S9046NR1 MRFE6S9046GNR1 C10 C12 C11 Device Data Freescale Semiconductor ...
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... W W 820 4.37 - j6.23 6.55 - j3.27 840 3.95 - j5.76 6.26 - j2.98 860 3.60 - j5.53 6.02 - j2.72 880 3.29 - j4.95 5.86 - j2.48 900 3.04 - j4.59 5.74 - j2.24 920 2.83 - j4.24 5.68 - j1.98 940 2.63 - j3.92 5.64 - j1.74 960 2.45 - j3.62 5.65 - j1.49 980 2.31 - j3.33 5.70 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRFE6S9046NR1 MRFE6S9046GNR1 13 ...
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... MRFE6S9046NR1 MRFE6S9046GNR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 15 ...
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... MRFE6S9046NR1 MRFE6S9046GNR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 17 ...
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... MRFE6S9046NR1 MRFE6S9046GNR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 19 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 May 2009 • Initial Release of Data Sheet MRFE6S9046NR1 MRFE6S9046GNR1 20 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Freescale Semiconductor Literature Distribution Center 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRFE6S9046N Rev. 0, 5/2009 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...