HD1A3M Renesas Electronics Corporation., HD1A3M Datasheet

no-image

HD1A3M

Manufacturer Part Number
HD1A3M
Description
On-chip Resistor Npn Silicon Epitaxial Transistor For Mid-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD1A3M-T1
Manufacturer:
NEC
Quantity:
20 000
Document No. D16182EJ4V0DS00 (4th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
FEATURES
• High current drives such as IC outputs and actuators available
• On-chip bias resistor
• Low power consumption during drive
HD1 SERIES LISTS
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
HD1A3M
HD1A4M
Products
HD1L2Q
HD1F2Q
HD1A4A
HD1F3P
HD1L3N
2. When 0.7 mm × 16 cm
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Marking
on-chip resistor NPN silicon epitaxial transistor
LP
LQ
LR
LS
LU
LX
LT
2
I
C(pulse)
ceramic board is used
Symbol
P
V
V
V
I
I
C(DC)
B(DC)
T
T
CBO
CEO
T
EBO
Note2
stg
The mark <R> shows major revised points.
j
R
Note1
0.47
0.22
1
1.0
2.2
4.7
10
(kΩ)
A
For mid-speed switching
= 25°C)
DATA SHEET
−55 to +150
R
Ratings
2
0.02
1.0
4.7
2.2
150
10
10
10
10
1.0
2.0
2.0
80
60
10
(kΩ)
Unit
°C
°C
W
V
V
V
A
A
A
COMPOUND TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
HD1 SERIES
2006

Related parts for HD1A3M

HD1A3M Summary of contents

Page 1

... NPN silicon epitaxial transistor FEATURES • High current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive HD1 SERIES LISTS Products Marking HD1A3M LP HD1F3P LQ HD1L3N LR HD1A4M LS HD1L2Q LT HD1F2Q LU HD1A4A LX ABSOLUTE MAXIMUM RATINGS (T ...

Page 2

... HD1A3M ELECTRICAL CHARACTERISTICS (T Parameter Symbol Collector cutoff current I CBO Note DC current gain h FE1 Note DC current gain h FE2 Note h DC current gain FE3 Note V Low level output voltage OL Note V Low level input voltage IL Input resistance R 1 E-to-B resistance R 2 Note PW ≤ 350 μ ...

Page 3

HD1A4M ELECTRICAL CHARACTERISTICS (T Parameter Symbol Collector cutoff current I CBO Note DC current gain h FE1 Note DC current gain h FE2 Note h DC current gain FE3 Note V Low level output voltage OL Note V Low level ...

Page 4

HD1A4A ELECTRICAL CHARACTERISTICS (T Parameter Symbol Collector cutoff current I CBO Note DC current gain h FE1 Note DC current gain h FE2 Note h DC current gain FE3 Note V Collector saturation voltage CE(sat) Note V Low level input ...

Page 5

TYPICAL CHARACTERISTICS (T <R> = 25°C) A Data Sheet D16182EJ4V0DS HD1 SERIES 5 ...

Page 6

The information in this document is current as of August, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Related keywords