RSB6.8G ROHM Co. Ltd., RSB6.8G Datasheet
RSB6.8G
Manufacturer Part Number
RSB6.8G
Description
Esd Protection Diode
Manufacturer
ROHM Co. Ltd.
Datasheet
1.RSB6.8G.pdf
(3 pages)
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Diodes
ESD Protection diode
RSB6.8G
ESD Protection, bi direction
1) Ultra small mold type. (VMD2)
2) High reliability.
3)
Silicon epitaxial planar
Zener voltage
R
C
Peak pulse power-1(tp=10×1000µS)
Power dissipation (*1）
Junction temperature
Storage temperature
Operating temperature
Features
Construction
Application
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C, Rating of per diode)
everse current
apacitance between terminals
Bi chip-mounter, automatic mounting
is possible.
Parameter
Parameter
Symbol
V
Ct
I
R
Z
Symbol
Topr
Tstg
Ppk
Tj
P
Taping specifications
External dimensions (Unit : mm)
ROHM : VMD2
0.27±0.03
0.6±0.05
●テ
dot (year week factory)
5.78
Min.
0.76±0.1
-
-
4±0.1
2±0.05
-55 to +150
-55 to +150
Typ.
15
仕様（
-
-
Limits
150
100
10
0.5±0.05
4±0.1
7.82
0.50
Max.
0.13±0.03
-
φ1.5+0.1
0
）
Unit
µA
pF
V
2±0.05
m
Unit
VMD2
W
℃
℃
℃
Land size figure (Unit : mm)
Structure
W
φ0.5
I
V
V
Z
=1mA
R
R
=3.5V
=0V , f=1MHz
Rev.A
0.5
Conditions
RSB6.8G
0.3
0.18±0.05
0.65±0.05
1/2
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RSB6.8G Summary of contents
Page 1
... Tj -55 to +150 Tstg -55 to +150 Topr Symbol Min. Typ. Max. V 5. RSB6.8G Land size figure (Unit : mm) 0.5 VMD2 Structure ） 0.18±0.05 φ1.5+0.1 0 φ0.5 0.3 2±0.05 0.65±0.05 Unit ℃ ℃ ℃ Conditions Unit V I =1mA Z µ ...
Page 2
... Ta=-25℃ 0.01 0.001 0.0001 0.00001 0 0.5 1 1.5 2 2.5 9 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 9 Ta=25℃ VR=3.5V 8 n=30pcs AVE:0.9344nA DISRESION MAP 1000 RSB6.8G 100 3.5 0 0.5 1 1.5 2 2.5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:14.95pF DISRESION MAP Rev.A f=1MHz 3 3.5 Ta=25℃ ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...