MMFT2955E ON Semiconductor, MMFT2955E Datasheet

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MMFT2955E

Manufacturer Part Number
MMFT2955E
Description
Power Mosfet 1 Amp, 60 Volts
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
MMFT2955ET1
Manufacturer:
MOT
Quantity:
748
MMFT2955E
Power MOSFET
1 Amp, 60 Volts
P−Channel SOT−223
avalanche and commutation modes. This new energy efficient device
also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT−223 package which is designed for medium power
surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Power rating when mounted on FR−4 glass epoxy printed circuit board using
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance, Junction−to−Ambient
(surface mounted)
Maximum Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Eliminating the Possibility of Damage to the Die
Silicon Gate for Fast Switching Speeds
The SOT−223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering,
Pb−Free Package is Available
recommended footprint.
Derate above 25°C
Energy − Starting T
(V
I
Purposes,
Time in Solder Bath
L
= 1.2 A, L = 0.2 mH, R
DD
= 25 V, V
− Pulsed
Rating
GS
= 10 V, Peak
J
= 25°C
(T
A
G
A
= 25°C unless otherwise noted)
Preferred Device
= 25 W)
= 25°C
Symbol
(Note 1)
T
R
J
V
V
E
I
P
, T
T
DM
I
qJA
DS
GS
D
AS
D
L
stg
−65 to 150
Value
108
156
260
±15
1.2
4.8
0.8
6.4
60
10
1
mW/°C
°C/W
Unit
Vdc
Adc
mJ
°C
°C
W
S
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMFT2955ET1
MMFT2955ET1G
MMFT2955ET3
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1
1 AMPERE, 60 VOLTS
ORDERING INFORMATION
MARKING DIAGRAM AND
A
Y
W
G
2955E
2
G
R
Gate
DS(on)
3
http://onsemi.com
PIN ASSIGNMENT
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Device Code
2955E G
P−Channel
(Pb−Free)
4 Drain
SOT−223
SOT−223
SOT−223
Package
4
AYW
Drain
D
= 300 mW
G
2
Publication Order Number:
S
CASE 318E
3
Source
TO−261AA
STYLE 3
1000 Tape & Reel
1000 Tape & Reel
4000 Tape & Reel
Shipping
MMFT2955E/D

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MMFT2955E Summary of contents

Page 1

... Pb−Free Package 2955E = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION † Device Package Shipping SOT−223 1000 Tape & Reel SOT−223 1000 Tape & Reel (Pb−Free) SOT−223 4000 Tape & Reel Publication Order Number: MMFT2955E/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage, (V Zero Gate Voltage Drain Current Vdc Vdc Vdc Vdc 125° Gate−Body Leakage ...

Page 3

... Limitations for repetitive pulses at various ambient temperatures can be determined by using the thermal response curves. ON Semiconductor Application Note, AN569, “Transient Thermal Resistance−General Data and Its Use” provides detailed instructions. SWITCHING SAFE OPERATING AREA ...

Page 4

... I DS(pk) source−drain diode current just prior to the onset of commutation specified at 80% rated BV R DSS R should be minimized during commutation Stray inductances in ON Semiconductor’s test circuit are assumed to be practical minimums. dV attained with dI /dt of 400 A/ms ...

Page 5

R GS − − 80% OF RATED dsL Figure 11. Commutating Safe Operating Area Test Circuit BV DSS I L(t) V ...

Page 6

... DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMFT2955E/D MAX 10° ...

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