SBE601 Sanyo Semiconductor Corporation, SBE601 Datasheet

SBE601

Manufacturer Part Number

SBE601

Description

Schottky Barrier Diode Twin Type ? Cathode Common

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBE601.pdf (3 pages)

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Ordering number : ENN7697A

SBE601

Applications

Features

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : SE

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Low forward voltage (V F max=0.60V).

Fast reverse recovery time (t rr max=20ns).

Low switching noise.

Low leakage current and high reliability due to highly reliable planar structure.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Schottky Barrier Diode (Twin Type

30V, 2A Rectifier

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V R

V F

I O

I R

t rr

50Hz sine wave, 1 cycle

I R =500 A

I F =2A

V R =15V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (600mm

SBE601

Conditions

13105SB TS IM TB-00000885 / 61504 TS IM TA-3350

•

Cathode Common)

0.8mm)

min

Ratings

typ

Ratings

110

--55 to +125

max

0.60

100

No.7697-1/3

Unit

C/W

Related parts for SBE601

SBE601 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBE601 Schottky Barrier Diode (Twin Type 30V, 2A Rectifier Symbol Conditions ...

Page 2

... Sine wave 0.6 180 0.5 360 0.4 0.3 (1)Rectangular wav e =60 0.2 (2)Rectangular wav e =120 (3)Rectangular wav e =180 0.1 (4)Sine wav e =180 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Average Forward Current SBE601 0. Anode Anode 4 : Cathode 5 : Cathode 6 : Cathode SANYO : CPH6 t rr 10000 1000 100 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. SBE601 20ms t 7 1.0 2 ...

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