V20100R Vishay, V20100R Datasheet

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V20100R

Manufacturer Part Number
V20100R
Description
V20100r & Vf20100r - Dual High-voltage Trench Mos Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet
Document Number: 89062
Revision: 21-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
TO-220AB
V
PIN 1
PIN 3
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
F
at I
T
V20100R
V
I
J
I
F(AV)
FSM
RRM
F
max.
= 10 A
PIN 2
CASE
1
2
TMBS
3
A
®
= 25 °C unless otherwise noted)
PIN 1
PIN 3
ITO-220AB
VF20100R
2 x 10 A
Ultra Low V
150 °C
0.65 V
100 V
120 A
per device
per diode
PIN 2
1
2
3
F
= 0.54 V at I
SYMBOL
T
J
V
I
I
F(AV)
V
, T
FSM
RRM
AC
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and ITO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
F
V20100R
= 5 A
Vishay General Semiconductor
V20100R & VF20100R
- 40 to + 150
1500
100
120
20
10
VF20100R
www.vishay.com
UNIT
°C
V
A
A
V
1

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V20100R Summary of contents

Page 1

... E3 suffix for commercial grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum SYMBOL V RRM per device I F(AV) per diode I FSM STG V20100R & VF20100R Vishay General Semiconductor = V20100R VF20100R 100 20 10 120 1500 - 150 www.vishay.com UNIT °C ...

Page 2

... V20100R & VF20100R Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage Instantaneous forward voltage per diode (2) Reverse current per diode Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test pulse width THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ...

Page 3

... Figure 6. Typical Transient Thermal Impedance Per Diode 10 0 100 Figure 7. Typical Transient Thermal Impedance Per Diode ° 1.0 MHz mVp-p sig 100 V20100R & VF20100R Vishay General Semiconductor Junction to Case V20100R 1 0.01 0 Pulse Duration (s) Junction to Case 1 VF20100R 0.01 0 ...

Page 4

... V20100R & VF20100R Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 45° REF. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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