V20120SG Vishay, V20120SG Datasheet

Page 1

... V20120SG, VF20120SG, VB20120SG & VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier ® TMBS TO-220AB V20120SG PIN 1 PIN 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB VB20120SG PIN HEATSINK PIN 3 PRIMARY CHARACTERISTICS I ) F(AV V RRM I FSM max. ...

Page 2

... V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage (2) Reverse current Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test pulse width THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) ...

Page 3

... V20120SG, VF20120SG, VB20120SG & VI20120SG 100 T = 150 ° 125 ° 100 ° °C A 0.1 0 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 100 T = 150 ° 125 ° 100 °C A 0.1 0. °C A 0.001 ...

Page 4

... V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.148 (3.74) 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) PIN 0.330 (8.38 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...