RB851Y ROHM Co. Ltd., RB851Y Datasheet

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RB851Y

Manufacturer Part Number
RB851Y
Description
Schottky Barrier Diode
Manufacturer
ROHM Co. Ltd.
Datasheet
Diodes
Schottky barrier diode
RB851Y
High frequency detection
1) Ultra small mold type. (EMD4)
2) Low Ct and high detection efficiency.
Silicon epitaxial planar
Reverse voltage (DC)
Forward current(DC)(*1)
Junction temperature
Storage temperature
(*1)Rating of per diode
Forward voltage
Revers e current
Capacitance between term inal
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Param eter
Parameter
Sym bol
1.65±0.1
1.7±0.05
V
Ct
I
4.0±0.1
R
F
Symbol
Tstg
V
JEITA : SC-75A Size
Dimensions (Unit : mm)
Tj
Taping specifications (Unit : mm)
I
ROHM : EMD4
F
1PIN
R
2.0±0.05
0.22±0.05
Min.
dot (year week factory)
-
-
-
(4)
(1)
0.5
1.6±0.1
1.0±0.1
1.6±0.05
4.0±0.1
0.5
Typ.
0.8
-
-
-40 to +125
(3)
(2)
φ1.5±0.1
      0
Limits
125
30
Max.
0.46
3
0.7
-
0.5±0.05
0.13±0.05
Unit
µA
pF
V
0~0.1
I
V
V
Unit
mA
F
φ0.8±0.1
R
R
=1m A
V
=1V
=0V , f=1MHz
Land size figure (Unit : mm)
Structure
EMD4
0.5
1.0
Conditions
Rev.B
0.3±0.1
0.65±0.1
RB851Y
1/2

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RB851Y Summary of contents

Page 1

... Limits Symbol 125 Tj -40 to +125 Tstg Min. Typ. Max 0. 0 0.8 - RB851Y Land size figure (Unit : mm) 0.5 1.0 0~0.1 EMD4 Structure 0.3±0.1 φ0.8±0.1 0.65±0.1 Unit V mA ℃ ℃ Unit Conditions µ =0V , f=1MHz R Rev.B ...

Page 2

... REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 40 Ta=25℃ VR=1V n=30pcs AVE:15.0uA 0 IR DISPERSION MAP 1.4 1.2 1 AVE:1.13kV 0.8 0.6 0.4 AVE:0.53kV 0.2 C=200pF C=100pF 0 R=0Ω R=1.5kΩ ESD DISPERSION MAP RB851Y 1 f=1MHz 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.8 Ta=25℃ f=1MHz VR=0V n=10pcs 0.75 0.7 AVE:0.764pF 0.65 Ct DISPERSION MAP Rev.B 5 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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