HN2S02FU TOSHIBA Semiconductor CORPORATION, HN2S02FU Datasheet
HN2S02FU
Manufacturer Part Number
HN2S02FU
Description
Toshiba Diode Silicon Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2S02FU.pdf
(3 pages)
High Speed Switching Application
Maximum Ratings
Electrical Characteristics
* : This is maximum rating of single diode (Q1 or Q2 or Q3).
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
** :Total rating
Forward voltage
Reverse current
Total capacitance
HN2S02FU is composed of 3 independent diodes.
Low forward voltage: V
Low reverse current: I
In the case of using 2 ro 3 diodes, the maximum ratings
per diodes is 75 % of the single diode one.
Characteristic
Characteristic
R
(Ta = 25°C)
F (3)
= 5µA (max.)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
= 0.54V (typ.)
(Q1, Q2, Q3 Common, Ta = 25°C)
Symbol
Symbol
HN2S02FU
V
V
V
I
V
T
T
I
FSM
V
F (1)
F (2)
F (3)
C
I
I
FM
RM
T
P
stg
opr
O
R
R
T
j
Circuit
Test
―
―
―
―
―
−55∼125
−40∼100
Rating
200 **
300 *
100 *
125
1 *
45
40
1
I
I
I
V
V
F
F
F
R
R
= 1mA
= 10mA
= 100mA
= 40V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
°C
V
V
A
z
JEDEC
JEITA
TOSHIBA
Weight: 6.2mg(Typ.)
Min
―
―
―
―
―
Typ.
0.28
0.36
0.54
18
―
HN2S02FU
1-2T1C
2004-03-01
―
―
Max
0.60
―
―
―
5
Unit: mm
Unit
µA
pF
V
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HN2S02FU Summary of contents
Page 1
... TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage 0.54V (typ.) F (3) Low reverse current 5µA (max.) R Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current ...
Page 2
... Pin Assignment (Top View) Marking A9 2 HN2S02FU 2004-03-01 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 HN2S02FU 030619EAA 2004-03-01 ...