HN2S03T TOSHIBA Semiconductor CORPORATION, HN2S03T Datasheet
HN2S03T
Manufacturer Part Number
HN2S03T
Description
Toshiba Diode Silicon Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2S03T.pdf
(3 pages)
High Speed Switching Application
Maximum Ratings
Electrical Characteristics
* : Unit rating. Total rating = Unit rating x 1.5
**: Total rating
package that are suitable for higher mounting densities.
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Forward voltage
Reverse current
Total capacitance
Two independent diodes are mounted on Thin Extreme Super Mini Quad
Low forward voltage
Low reverse current
Small total capacitance
Characteristic
Characteristic
(Q1, Q2 Common, Ta = 25°C)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
: V
: I
: C
R
F (3)
T
= 0.5µA (max)
= 3.9pF (typ.)
(Q1, Q2 Common, Ta = 25°C)
= 0.50V (typ.)
Symbol
Symbol
V
V
V
I
V
T
T
I
FSM
V
F (1)
F (2)
F (3)
C
I
I
FM
RM
T
P
stg
opr
HN2S03T
O
R
R
T
j
Circuit
Test
―
―
―
―
―
−55∼125
−40∼100
Rating
100 *
70 **
50 *
125
1 *
25
20
1
I
I
I
V
V
F
F
F
R
R
= 1mA
= 5mA
= 50mA
= 20V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
°C
V
V
A
z
JEDEC
JEITA
TOSHIBA
Weight: 1.5mg(Typ.)
TESQ
1. ANODE1
2. ANODE2
3. CATHODE2
4. CATHODE1
Min
―
―
―
―
―
1
2
1.2±0.05
0.9±0.05
Typ.
0.33
0.38
0.50
3.9
―
HN2S03T
2004-02-27
―
―
―
Max
0.55
0.5
―
―
―
Unit: mm
4
3
Unit
µA
pF
V
Related parts for HN2S03T
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
HN2S03T Summary of contents
Page 1
... I = 5mA F ( ― 50mA F ( ― 20V R R ― 1MH HN2S03T Unit: mm 1.2±0.05 0.9±0. ANODE1 2. ANODE2 3. CATHODE2 TESQ 4. CATHODE1 JEDEC ― JEITA ― TOSHIBA ― Weight: 1.5mg(Typ.) Min Typ. Max Unit ― ...
Page 2
... Pin Assignment (Top View Marking 100 AMBIENT TEMPERATURE Ta (°C) 2 HN2S03T P – 100 125 150 175 2004-02-27 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 HN2S03T 030619EAA 2004-02-27 ...