MA720 Panasonic Corporation of North America, MA720 Datasheet
MA720
Manufacturer Part Number
MA720
Description
Silicon Epitaxial Planar Type For High Frequency Rectification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA720.pdf
(3 pages)
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Schottky Barrier Diodes (SBD)
MA3X720
Silicon epitaxial planar type
For high frequency rectification
I Features
I Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
O
Publication date: April 2004
• Forward current (Average) I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
possible
reverse recovery time t
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 400 MHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
*
rr
F
Bias Application Unit (N-50BU)
and good rectification efficiency
(MA720)
A
F(AV)
Symbol
I
V
I
F(AV)
T
V
FSM
T
RM
stg
R
a
j
Symbol
= 25°C ± 3°C
Wave Form Analyzer
(SAS-8130)
R
= 500 mA rectification is
i
V
I
C
t
= 50 Ω
a
R
rr
F
t
= 25°C
−55 to +125
Rating
500
125
40
40
2
I
V
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 500 mA
= I
= 0.1 I
SKH00079CED
= 35 V
= 0 V, f = 1 MHz
R
= 100 mA
R
, R
Unit
mA
°C
°C
V
V
A
V
Conditions
L
R
= 100 Ω
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: M2W
Internal Connection
EIAJ: SC-59
t
10˚
(0.95) (0.95)
I
F
1
2.90
I
I
R
1.9
F
R
Output Pulse
L
= 100 mA
= 100 mA
±0.1
+0.20
–0.05
= 100 Ω
Min
0.40
3
2
t
I
rr
rr
+0.10
–0.05
= 0.1 I
1
t
Typ
R
3
60
5
2
Mini3-G1 Package
Max
0.55
100
0.16
1: Anode
2: N.C.
3: Cathode
+0.10
–0.06
Unit: mm
Unit
µA
pF
ns
V
1
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MA720 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type For high frequency rectification I Features • Forward current (Average) I F(AV) possible • Optimum for high frequency rectification because of its short reverse recovery time t rr • Low forward voltage V and good rectification efficiency ...
Page 2
MA3X720 I 25°C = 100° −20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...