FGA70N30TD ETC-unknow, FGA70N30TD Datasheet
FGA70N30TD
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FGA70N30TD Summary of contents
Page 1
... Thermal Resistance, Junction-to-Ambient θJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGA70N30TD Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 40A C tions where low conduction and switching losses are essential ...
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... Turn-On Delay Time d(on) t Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGA70N30TD Rev. A Packaging Package Type TO-3P Tube unless otherwise noted C Test Conditions 250uA 0V 250uA GE C ...
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... Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery Cur rent Q Diode Reverse Recovery Charge rr FGA70N30TD Rev 25°C unless otherwise noted C Test Conditions T = 25° 10A 125° 25°C ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.4 Common Emitter V = 15V GE 2.0 1.6 1.2 0 Collector-EmitterCase Temperature, T FGA70N30TD Rev. A Figure 2. Typical Output Characteristics 160 10V 120 [V] CE Figure 4. Transfer Characteristics 160 100 [V] CE Figure 6 ...
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... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 300 100 t r Common Emitter d(on Gate Resistance, R FGA70N30TD Rev. A (Continued) Figure 8. Capacitance Characteristics GE 6000 Common Emitter 125 C 5000 C 4000 3000 2000 1000 16 20 [V] GE Figure 10. SOA Characteristics 100 ...
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... E off E on 100 Common Emitter Gate Resistance 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 1E-3 1E-5 FGA70N30TD Rev. A (Continued) Figure 14. Turn-off Characteristics vs. 1000 d(on) 100 60 80 100 [A] C Figure 16. Switching Loss vs. Collector Current 10000 1000 100 = 200V 15V 40A 125 ...
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... Typical Performance Characteristics Figure 18. Forward Characteristics 100 125 0.1 0.0 0.5 1.0 Forw ard Voltage , V Figure 20. Typical Reverse Recovery Time 100 di/dt [A/ FGA70N30TD Rev. A (Continued 125 100 1.5 2.0 2.5 [ 10A 500 µ ...
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... FGA70N30TD Rev. A TO-3PN 8 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA70N30TD Rev. A HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ® IntelliMAX™ QFET ISOPLANAR™ ...