FGA25N120AN Fairchild Semiconductor, FGA25N120AN Datasheet

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FGA25N120AN

Manufacturer Part Number
FGA25N120AN
Description
Npt Technology Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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©2004 Fairchild Semiconductor Corporation
FGA25N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs
provides low conduction and switching losses. The AN
series offers an solution for application such as induction
heating (IH), motor control, general purpose inverters and
uninterruptible power supplies (UPS).
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
Symbol
JC
JA
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
Description
TO-3P
Parameter
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
C
C
C
C
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
= 25 C
= 100 C
= 25 C
= 100 C
G
G
Typ.
FGA25N120AN
--
--
-55 to +150
-55 to +150
C
C
1200
E
E
310
125
300
40
25
75
20
CE(sat)
Max.
0.4
= 2.5 V @ I
40
IGBT
C
FGA25N120AN Rev. A
Units
Units
= 25A
C/W
C/W
W
W
V
V
A
A
A
C
C
C

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FGA25N120AN Summary of contents

Page 1

... High input impedance G G TO- unless otherwise noted C Description @ 100 100 C C Parameter IGBT = 2 25A CE(sat FGA25N120AN Units 1200 310 W 125 W -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.4 C C/W FGA25N120AN Rev. A ...

Page 2

... 25A 15V GE -- Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 ± 100 nA 5.5 7.5 V 2.5 3 2100 -- pF 180 -- 170 -- 4.8 7.2 mJ 1.0 1.5 mJ 5.7 8 180 -- 200 300 105 160 FGA25N120AN Rev. A ...

Page 3

... [V] GE Fig 6. Saturation Voltage vs 15V = 25 = 125 Collector-Emitter Voltage, V [V] CE Vcc = 600V load Current : peak of square wave 1 10 100 1000 Frequency [kHz] = 125 40A 25A I = 12. Gate-Emitter Voltage FGA25N120AN Rev ...

Page 4

... V = 600V 25A 25 125 Gate Resistance 15V = 600V 25 = 125 Eon Eoff Gate Resistance 15V 25 = 125 td(off Collector Current, I [A] C Collector Current FGA25N120AN Rev. A ...

Page 5

... Gate Charge, Q [nC] g Safe Operating Area V = 15V 125 100 1000 Collector-Emitter Voltage, V [V] CE Pdm Pdm Duty factor Duty factor Peak Tj = Pdm Zthjc + T Peak Tj = Pdm Zthjc + 0 FGA25N120AN Rev. A ...

Page 6

... Package Dimension TO-3P (FS PKG CODE) 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters FGA25N120AN Rev. A ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...

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