FGA25N120AN Fairchild Semiconductor, FGA25N120AN Datasheet
FGA25N120AN
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FGA25N120AN Summary of contents
Page 1
... High input impedance G G TO- unless otherwise noted C Description @ 100 100 C C Parameter IGBT = 2 25A CE(sat FGA25N120AN Units 1200 310 W 125 W -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.4 C C/W FGA25N120AN Rev. A ...
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... 25A 15V GE -- Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 ± 100 nA 5.5 7.5 V 2.5 3 2100 -- pF 180 -- 170 -- 4.8 7.2 mJ 1.0 1.5 mJ 5.7 8 180 -- 200 300 105 160 FGA25N120AN Rev. A ...
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... [V] GE Fig 6. Saturation Voltage vs 15V = 25 = 125 Collector-Emitter Voltage, V [V] CE Vcc = 600V load Current : peak of square wave 1 10 100 1000 Frequency [kHz] = 125 40A 25A I = 12. Gate-Emitter Voltage FGA25N120AN Rev ...
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... V = 600V 25A 25 125 Gate Resistance 15V = 600V 25 = 125 Eon Eoff Gate Resistance 15V 25 = 125 td(off Collector Current, I [A] C Collector Current FGA25N120AN Rev. A ...
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... Gate Charge, Q [nC] g Safe Operating Area V = 15V 125 100 1000 Collector-Emitter Voltage, V [V] CE Pdm Pdm Duty factor Duty factor Peak Tj = Pdm Zthjc + T Peak Tj = Pdm Zthjc + 0 FGA25N120AN Rev. A ...
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... Package Dimension TO-3P (FS PKG CODE) 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters FGA25N120AN Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...