FGA50N100BNT Fairchild Semiconductor, FGA50N100BNT Datasheet

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FGA50N100BNT

Manufacturer Part Number
FGA50N100BNT
Description
Fga50n100bnt 1000v, 50a Npt-trench Igbt Co-pak
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Corporation
FGA50N100BNT Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
FGA50N100BNT
1000V, 50A NPT-Trench IGBT CO-PAK
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• RoHS Compliant
Applications
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJA
UPS, PFC, I-H Jar, Induction Heater, Home Appliance.
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
= 2.5 V @ I
TO-3P
Description
Parameter
C
= 60A
@ T
@ T
@ T
@ T
C
C
C
C
1
= 25
= 100
= 25
= 100
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for UPS, PFC, I-H
Jar, induction Heater and Home Appliance.
o
o
C
C
o
o
C
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
1000
± 25
200
156
300
50
35
63
Max.
40.0
0.8
www.fairchildsemi.com
March 2009
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGA50N100BNT Summary of contents

Page 1

... R (IGBT) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGA50N100BNT Rev. A General Description Trench insulated gate bipolar transistors (IGBTs) with NPT = 2 60A technology show outstanding performance in conduction and C switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA50N100BNT Rev. A Packaging Package Type Qty per Tube TO-3PN Rail / Tube T = 25°C unless otherwise noted C Test Conditions = 0V 1mA 1000V, V ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.5 Common Emitter V = 15V GE 3.0 1.5 1 Collector-EmitterCase Temperature, T FGA50N100BNT Rev. A Figure 2. Typical Output Characteristics 200 160 9V 120 [V] CE Figure 4. Transfer Characteristics 200 160 ...

Page 4

... Figure 11. SOA Characteristics 500 100 10 1 *Notes: 0 150 Single Pulse 0. 100 Collector-Emitter Voltage, V FGA50N100BNT Rev. A Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics 15 12 ...

Page 5

... Figure 17. Switching Loss vs. Gate Resistance 50 Common Emitter V = 600V 15V 60A 125 Gate Resistance, R FGA50N100BNT Rev. A Figure 14. Turn-off Characteristics vs. 2000 1000 100 = 600V 15V 60A 125 Ω Figure 16. Turn-off Characteristics vs. ...

Page 6

... Figure 19. Turn off Switching SOA Characterisics 250 100 10 Safe Operating Area 15V 125 100 Collector-Emitter Voltage 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA50N100BNT Rev. A 1000 3000 [V] CE Figure 20.Transient Thermal Impedance of IGBT 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] 6 Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FGA50N100BNT Rev. A TO-3PN 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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