TF218TH Sanyo Semiconductor Corporation, TF218TH Datasheet

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TF218TH

Manufacturer Part Number
TF218TH
Description
N-channel Silicon Junction Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : EN7683A
TF218TH
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25 C, V CC =4.5V, R L =1k , Cin=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
Output Impedance
Total Harmonic Distortion
Output Noise Voltage
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)GDO
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
V GS(off)
Symbol
Symbol
V GDO
I DSS
V NO
Ciss
Crss
THD
Tstg
Z IN
G V
G VV
P D
yfs
Z O
I G
I D
Tj
Gvf
I G =- -100 A
V DS =5V, I D =1 A
V DS =5V, V GS =0V
V DS =5V, V GS =0V, f=1kHz
V DS =5V, V GS =0V, f=1MHz
V DS =5V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =4.5 1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
V IN =30mV, f=1kHz
V IN =0V, A curve
TF218TH
O2005GB MS IM TB-00001853 / 33004 TS IM TA-100284
Conditions
Conditions
min
140*
- -0.2
--20
0.5
25
Ratings
typ
1000
Ratings
0.65
--0.6
--3.0
--1.2
1.0
3.5
1.2
--55 to +150
max
350*
--110
--1.0
--3.5
--1.0
100
150
--20
10
1
No.7683-1/4
Unit
mW
Unit
M
mA
mA
mS
pF
dB
dB
dB
dB
pF
%
V
V
V
C
C
A

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TF218TH Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TF218TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Symbol ...

Page 2

... The TF218TH is classified by I DSS as follows : (unit : A) Rank A4 I DSS 140 to 240 210 to 350 Package Dimensions unit : mm 7031-001 Top View 1.4 0. 0.1 0.2 0.45 Bottom View 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 500 450 400 350 300 250 200 150 100 ...

Page 3

... Drain-to-Source Voltage DSS =4. =10mV -- =1.0k f=1kHz I DSS : V DS =5.0V --2 --3 --4 --5 --6 --7 0 100 200 300 Drain Current, I DSS -- TF218TH -0.70 -0.65 -0.60 -0.55 -0.50 -0.45 -0.40 -0.35 -0.30 400 500 0 A IT02314 120 f=1kHz 100 150 200 0 IT02316 =0V ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice. TF218TH =30mV f=1MHz 31 ...

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