TF250TH Sanyo Semiconductor Corporation, TF250TH Datasheet

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TF250TH

Manufacturer Part Number
TF250TH
Description
N-channel Silicon Junction Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENA0381
TF250TH
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking: C
*
: The TF250TH is classified by I DSS as follows : (unit : A)
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Rank
I DSS
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
140 to 240
4
210 to 350
V (BR)GDO
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
V GS (off)
Symbol
Symbol
5
V GDO
I DSS
Ciss
Crss
Tstg
P D
yfs
I G
I D
Tj
SANYO Semiconductors
I G =- -100 A
V DS =2V, I D =1 A
V DS =2V, V GS =0V
V DS =2V, V GS =0V, f=1kHz
V DS =2V, V GS =0V, f=1MHz
V DS =2V, V GS =0V, f=1MHz
TF250TH
Conditions
Conditions
DATA SHEET
82506GB MS IM TC-00000099
min
140*
--0.1
--20
0.7
Ratings
typ
Ratings
0.55
--0.4
1.3
2.8
Continued on next page.
--55 to +150
max
350*
100
150
--1.0
--20
10
No. A0381-1/4
1
Unit
mW
Unit
mA
mA
mS
pF
pF
V
V
V
C
C
A

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TF250TH Summary of contents

Page 1

... Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Marking The TF250TH is classified by I DSS as follows : (unit : A) * Rank 4 I DSS 140 to 240 Any and all SANYO Semiconductor products described or contained herein do not have specifications ...

Page 2

... Gate SANYO : VTFP 300 250 200 150 100 0.5 1.0 Drain-to-Source Voltage TF250TH Symbol Conditions =10mV, f=1kHz =10mV, f=1kHz 1.5V Gvf f=1kHz to 110Hz THD V IN =30mV, f=1kHz =0V, A curve Test Circuit Voltage gain ...

Page 3

... Drain-to-Source Voltage DSS 1 = =10mV 1.2 f=1kHz 1 =2.2k Cin=5pF 0.8 I DSS : V DS =2V 0.6 0.4 0.2 0 --0.2 --0.4 --0.6 0 100 200 300 Drain Current, I DSS -- TF250TH 400 V DS =2V 350 300 250 200 150 100 50 0 --0.1 0 --0.7 IT10919 --0 = =0V f=1kHz --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 400 500 ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. TF250TH 1.4 THD : V CC =2V f=1kHz 1.2 I DSS : V DS =2V 1 ...

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