BSS119 Infineon Technologies Corporation, BSS119 Datasheet
BSS119
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BSS119 Summary of contents
Page 1
... Symbol puls dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT23 3 Drain pin 3 Gate pin1 Source pin 2 Value 0.17 0.13 0.68 6 ±20 GS 0.36 tot T -55... +150 j , stg 55/150/56 BSS119 100 VPS05161 Marking sSH Unit A kV/µ °C 2006-12-01 ...
Page 2
... Drain-source on-state resistance V =4.5V, I =0. Drain-source on-state resistance V =10V, I =0.17A GS D Rev. 1.3 Symbol R thJS = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSS119 Values Unit min. typ. max 350 K/W Values Unit min. typ. max. 100 - - V 1.3 1.8 2.3 µA - 0.05 0 100 ...
Page 3
... =80V, I =0.17A 10V GS V (plateau) V =80V 0. =25° = =50V /dt=100A/µ Page 3 BSS119 Values min. typ. max. 0.08 0. 8.6 11.2 - 3.1 4 3.1 4 0.08 0.12 - 0.76 1.1 - 1.67 2 0.68 - ...
Page 4
... Page BSS119 100 120 = BSS119 single pulse - 2006-12-01 BSS119 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...
Page 5
... A 0.28 0.24 0.2 0.16 0.12 0.08 0. 0.8 1.6 2.4 Rev. 1.3 6 Typ. drain-source on resistance R DS(on) parameter Typ. forward transconductance g = f(I DS(on)max fs parameter: T 0.3 S 0.24 0.22 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 3.2 4 Page ° 0.04 0.08 0.12 0.16 0.2 0.24 0. °C j 0.04 0.08 0.12 0.16 0.2 0.24 0.28 2006-12-01 BSS119 3.4V 3.8V 4V 4.6V 4. 10V ...
Page 6
... V DS Page =50µ 2.6 V 98% 2.2 2 typ. 1.8 1.6 1.4 2% 1.2 1 0.8 0.6 -60 - BSS119 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 BSS119 °C 100 160 2006-12-01 ...
Page 7
... 0 max 8 0 max 0 max 0.4 0.8 1.2 Rev. 1.3 14 Drain-source breakdown voltage , V DS (BR)DSS = 25 °C j 120 V 114 112 110 108 106 104 102 100 1 Page BSS119 -60 - 100 2006-12-01 BSS119 °C 180 T j ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 Page 8 BSS119 2006-12-01 ...