NDS8839H Fairchild Semiconductor, NDS8839H Datasheet

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NDS8839H

Manufacturer Part Number
NDS8839H
Description
Complementary Mosfet Half Bridge
Manufacturer
Fairchild Semiconductor
Datasheet

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________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
© 1997 Fairchild Semiconductor Corporation
DSS
GSS
D
J
NDS8839H
Complementary MOSFET Half Bridge
,T
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
General Description
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
(Single Device)
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Single Device)
Thermal Resistance, Junction-to-Case
(Single Device)
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1)
(Note 1a)
(Note 1a & 2)
(Note 1c)
(Note 1a)
(Note 1b)
Features
N-Channel 5.7A, 30V, R
P-Channel -4.0A, -30V, R
High density cell design or extremely low R
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
N-Channel
N - G a t e
P - G a t e
5.7
30
20
15
-55 to 150
2.5
1.2
50
25
1
DS(ON)
DS(ON)
V +
V -
=0.045
=0.09
P-Channel
-30
-20
15
-4
@ V
@ V
DS(ON)
GS
GS
V o u t
V o u t
V o u t
V o u t
=10V.
=-10V.
March 1996
.
NDS8839H Rev. A1
Units
°C/W
°C/W
W
°C
V
V
A

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NDS8839H Summary of contents

Page 1

... A N-Channel 30 20 5.7 (Note 1a & (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) March 1996 =0.045 @ V =10V. DS(ON) GS =0. =-10V. DS(ON DS(ON P-Channel Units - 2.5 W 1.2 1 -55 to 150 °C 50 °C/W 25 °C/W NDS8839H Rev. A1 ...

Page 2

... MHz P-Channel 1.0 MHz Type Min Typ Max Units N- P-Ch -30 V N-Ch 1 µA 10 µA P-Ch -1 µA -10 µA All 100 nA All -100 nA N-Ch 1 1.6 2.8 V 0.7 1.2 2.2 P-Ch -1 -1.6 -2.8 -0.7 -1.2 -2.2 N-Ch 0.04 0.045 0.055 0.09 0.053 0.075 P-Ch 0.066 0.09 0.092 0.18 0.1 0.15 N- P-Ch -20 N- P-Ch 7 N-Ch 720 pF P-Ch 690 N-Ch 370 pF P-Ch 430 N-Ch 250 pF P-Ch 160 NDS8839H Rev. A1 ...

Page 3

... 2 /dt = 100 A/µ P-Channel -2 /dt = 100 A/µ Type Min Typ Max Units N-Ch 2.1 P-Ch 3.1 N-Ch 5.2 P-Ch 5.1 N-Ch 2 P-Ch -2 N-Ch 0.9 1.2 P-Ch -0.85 -1.2 N-Ch 100 P-Ch 100 is guaranteed NDS8839H Rev ...

Page 4

... Figure 6. P-Channel On-Resistance Variation = -10V -6.0 -5.0 -4.5 -4.0 -3.5 -3 DRAIN-SOURCE VOLTAGE ( -3. 4.0 -4.5 -5.0 -6 -12 - DRAIN CURRENT (A) D with Gate Voltage and Drain Current -4. -10V GS - JUNCTION TEMPERATURE (°C) J with Temperature. -4 -10 - NDS8839H Rev. A1 ...

Page 5

... Drain Current and Temperature T = -55°C = -10V J 125°C 25° GATE TO SOURCE VOLTAGE (V) GS Figure 10. P-Channel Transfer Characteristics -250µ 100 T , JUNCTION TEMPERATURE (°C) J with Temperature. - 125 150 NDS8839H Rev. A1 ...

Page 6

... T , JUNCTION TEMPERATURE (°C) J Variation with Temperature MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Characteristics -5V DS -10V -20V GATE CHARGE (nC) g NDS8839H Rev iss C oss C rss 30 25 ...

Page 7

... Figure 22. P-Channel Body Diode Forward . Voltage Variation with Current and Temperature 1a 4.5"x5" FR-4 Board Still Air 0 -55° -10V 25°C 125° -12 - DRAIN CURRENT ( 25°C -55°C 0.4 0.8 1.2 1 BODY DIODE FORWARD VOLTAGE ( -20 2 NDS8839H Rev. A1 ...

Page 8

... See Note 25° DRAIN-SOURCE VOLTAGE (V) DS Figure 27. P-Ch Maximum Safe Operating . Area R ( See Note 1c JA P(pk ( Duty Cycle NDS8839H Rev. A1 ...

Page 9

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 10

... SOIC(8lds) Reel Configuration: Figure 4.0 Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0.05 +/-0 ...

Page 11

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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