MTM86627 Panasonic Corporation of North America, MTM86627 Datasheet
MTM86627
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MTM86627 Summary of contents
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... Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky Barrier Diode) that is highly suitable for DC-DC converter and other switching circuits. Features Built-in schottky barrier diode: V ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). MTM86627 Electrical Characteristics T = 25°C±3°C a FET Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage * 1 Drain-source ON resistance * 1 Forward transfer admittance Short-circuit input capacitance (Common source) ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). Characteristics charts of FET MTM86627_ 600 Measuring on ceramic substrate × × 0.8 mm 400 200 Single unit 120 160 Ambient temperature T (°C) a MTM86627_ DS(on I DS(on 1 ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). MTM86627 WSSMini6-F1 1.60 ±0.05 +0.05 0.20 −0. (0.50) 1.00 ±0.05 5° (0.50) SJF00085AED Unit: mm +0.05 0.13 −0.03 ...
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Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...