MTM86227 Panasonic Corporation of North America, MTM86227 Datasheet

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MTM86227

Manufacturer Part Number
MTM86227
Description
Silicon N-channel Mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet

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Silicon MOS FETs (Small Signal)
MTM86227
Silicon N-channel MOS FET
For DC-DC converter circuits
For switching circuits
 Overview
converter and other switching circuits.
 Features
 Absolute Maximum Ratings T
Note) * 1: Pulse width ≤ 10 ms, Duty cycle ≤ 1%
 Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2008
 Low ON resistance: R
 Low short-circuit input capacitance (common source): C
 Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
 Low drive voltage: 1.8 V drive
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance 1
Drain-source ON resistance 2
Drain-source ON resistance 3
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time
Turn-off time
MTM86227 is the N-channel MOS FET that is highly suitable for DC-DC
* 2: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
2. * 1: Pulse measurement
P
* 2: Test circuit
D
absolute maximum rating without a heat shink: 150 mW
* 2
* 2
Parameter
Parameter
* 2
* 1
on
= 80 mW (V
*1
*1
*1
*1
a
= 25°C±3°C
GS
a
= 25°C
= 4.0 V)
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
I
T
P
I
Symbol
R
R
R
DSS
GSS
DP
D
stg
ch
D
Y
V
DS(on)
DS(on)
DS(on)
I
I
V
C
C
C
t
DSS
GSS
t
DSS
off
on
TH
oss
iss
rss
fs
1 I
2 I
3 I
–55 to +150
Rating
I
V
V
I
I
V
V
V
iss
D
D
D
D
D
D
±10
540
150
2.2
8.0
DS
GS
DS
DD
DD
20
= 1.0 mA, V
= 1.0 mA, V
= 1.0 A, V
= 0.5 A, V
= 0.5 A, V
= 1.0 A, V
= 280 pF
= 20 V, V
= ±8.0 V, V
= 10 V, V
= 10 V, V
= 10 V, V
SJF00084AED
GS
GS
GS
DS
GS
GS
Unit
mW
Conditions
GS
GS
GS
DS
°C
°C
V
V
A
A
= 4.0 V
= 2.5 V
= 1.8 V
= 10 V
DS
= 0
= 0, f = 1 MHz
= 0 V to 4 V, I
= 4 V to 0 V, I
= 0
= 10 V
= 0
D
D
 Package
 Marking Symbo: JF
 Internal Connection
= 1.0 A
= 1.0 A
 Code
 Pin Name
WSSMini6-F1
1: Drain
2: Drain
3: Gate
Min
0.4
3.0
20
(D)
(D)
6
1
0.85
Typ
100
170
280
4.0
80
18
17
12
50
(D)
(D)
5
2
4: Source
5: Drain
6: Drain
Max
(G)
(S)
±10
105
150
300
1.3
10
4
3
Unit
mW
mW
mW
mA
mA
pF
pF
pF
ns
ns
V
V
S
1

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MTM86227 Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOS FETs (Small Signal) MTM86227 Silicon N-channel MOS FET For DC-DC converter circuits For switching circuits  Overview MTM86227 is the N-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits.  Features  Low ON resistance 4  ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). MTM86227 Test circuit µs W Duty Cycle ≤ Ω 1 Ω OUT OUT S SJF00084AED 90% 10% 90% 10 off ...

Page 3

... This product complies with the RoHS Directive (EU 2002/95/EC). WSSMini6-F1 1.60 ±0.05 +0.05 0.20 −0. (0.50) (0.50) 1.00 ±0.05 5° SJF00084AED MTM86227 Unit: mm +0.05 0.13 −0.03 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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