EM6K6 ROHM Co. Ltd., EM6K6 Datasheet

no-image

EM6K6

Manufacturer Part Number
EM6K6
Description
1.8v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EM6K6
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
EM6K6
Manufacturer:
ROHM
Quantity:
15 244
Part Number:
EM6K6 T2CR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
EM6K6 T2R
Manufacturer:
NPNX
Quantity:
460
Part Number:
EM6K6 T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
EM6K6(N+N)
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
EM6K6T2R
Manufacturer:
ROHM
Quantity:
152 000
Part Number:
EM6K6T2R
Manufacturer:
ROHM
Quantity:
8 000
Part Number:
EM6K6T2R
Manufacturer:
ROHM
Quantity:
4 665
Transistor
1.8V Drive Nch+Nch MOSFET
EM6K6
Silicon N-channel
MOSFET
Switching
1) The MOSFET elements are independent,
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.8V) makes this device ideal for
<It is the same ratings for the Tr1 and Tr2>
∗ 1 Pw≤10µs, Duty cycle≤1%
∗ 2 Each terminal mounted on a recommended land.
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain−source voltage
Gate−source voltage
Drain current
Channel temperature
Storage temperature
Total power dissipation
Type
EM6K6
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
eliminating mutual interference.
portable equipment.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
8000
T2R
Symbol
V
V
Tstg
Tch
Rth(ch-a)
I
I
P
Symbol
DSS
GSS
DP
D
D
∗ 1
∗ 2
−55 to +150
Limits
±300
±600
150
150
120
20
±8
Limits
1042
833
°C/W / ELEMENT
mW / ELEMENT
°C/W / TOTAL
mW / TOTAL
Unit
Dimensions (Unit : mm)
Unit
EMT6
mA
mA
°C
°C
V
V
Equivalent circuit
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Abbreviated symbol : K06
(6)
(1)
Gate
Protection
Diode
Tr1
Each lead has same dimensions
(5)
(2)
Gate
Protection
Diode
Tr2
EM6K6
(4)
(3)
1/3
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain

Related parts for EM6K6

EM6K6 Summary of contents

Page 1

... ELEMENT °C Tch 150 −55 to +150 °C Tstg Symbol Limits Unit °C/W / TOTAL 833 ∗ Rth(ch-a) °C/W / ELEMENT 1042 EM6K6 Each lead has same dimensions Abbreviated symbol : K06 Equivalent circuit Gate (6) (5) (4) Protection Diode ∗ Tr1 Tr2 ∗ Gate Protection (1) ...

Page 2

... Unit ∗ − − 1 100mA Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 DRAIN CURRENT : I (A) D Fig.2 Static drain-source on-state resistance vs. drain current (Ι) EM6K6 Conditions =±8V =1mA =20V =10V, I =1mA =300mA, V =4.0V I ...

Page 3

... SOURCE-DRAIN VOLTAGE : V SD Fig.5 Source current vs. source-drain voltage 1 Pulse width 50 10 (on Fig.9 Switching time waveforms EM6K6 100 = 0.01 0.1 1 1.5 DRAIN-SOURCE VOLTAGE : V (V) Fig.6 Typical capacitance vs. drain-source voltage 90% 50% 10% 90 (off) t off Ta =25° ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords