QS5U21 ROHM Co. Ltd., QS5U21 Datasheet

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... QS5U21 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS5U21 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward voltage. Applications ...

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... V DD − − V =−4 −1.5A − − − − −1.2 = −0.75A − − 0. 1.0A F − − µA 200 V = 20V R QS5U21 Conditions = −1mA D =− 4.5V GS =− =− 2. −0.75A D −15 − Rev.A 2/4 ...

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... Voltage 10000 Ta=25 C f=1MHZ V 1000 100 C 10 0.01 0 Drain−Source Voltage : −V [V] DS Fig.8 Typical Capactitance vs.Drain−Source Voltage QS5U21 1000 =−4.5V 100 Ta=125°C 75°C 25°C −20° 0.1 1 Drain Current : −I [A] D Fig.3 Static Drain−Source On−State vs.Drain Current Resistance ...

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... DD Fig.15 Gate Charge Measurement Circuit 1000 Ta=125°C 75°C 25°C −20°C 100 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 6 Forward Voltage :V [V] F Fig.11 Forward Temperature Characteristics DS QS5U21 100 10 1 0.1 0.01 0.001 0.0001 0 Reverse Voltage : V [V] R Fig.12 Reverse Temperature Characteristics Pulse Width V GS 10% 50% 50% 10% 90% ...

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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...