QS5U12 ROHM Co. Ltd., QS5U12 Datasheet
QS5U12
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QS5U12 Summary of contents
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... QS5U12 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Features 1) The QS5U12 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode has low forward voltage. ...
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... V GS ∗ − − =2.0A 0 ∗ − − =3. 1 − − =1.0A 0. − − µA =20V 200 V R QS5U12 Unit ° °C °C Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4V GS =2.5V GS =2. 15V =0V GS Rev ...
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... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 Ta=25°C f=1MHz V GS 100 10 1.5 0.01 0 DRAIN-SOURCE VOLTAGE : V Fig.8 Typical Capacitance vs. Drain-Source Voltage QS5U12 1000 =4.5V Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : I Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 =2. ...
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... FORWARD VOLTAGE : V (V) F Fig.11 Forward Current vs. Forward Voltage QS5U12 100 125°C 10 75°C 1 0.1 25°C 0.01 −25°C 0.001 0.0001 0 REVERSE VOLTAGE : V R Fig.12 Reverse Current vs. Reverse Voltage Pulse Width 90% 50% 50% ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...