QS6M4 ROHM Co. Ltd., QS6M4 Datasheet

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QS6M4

Manufacturer Part Number
QS6M4
Description
2.5v Drive Nch+pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Nch+Pch MOSFET
QS6M4
Silicon P-channel MOSFET
Silicon N-channel MOSFET
1) The QS6M4 combines Pch MOSFET with a Nch
2) Low on-state resistance with a fast switching.
3) Low voltage drive (2.5V).
Load switch, inverter
∗ Mounted on a ceramic board
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Channel to ambient
Type
QS6M4
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
MOSFET in a single TSMT6 package.
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
Taping
3000
Rth (ch-a)
∗1
∗1
∗2
TR
Symbol
Nchannel
±1.5
±6.0
±12
0.8
6.0
30
−55 to +150
Limits
1.25
150
0.9
Limits
100
139
Pchannel
−0.75
±1.5
±6.0
−6.0
−20
±12
°C / W / ELEMENT
W / ELEMENT
°C / W / TOTAL
W / TOTAL
Dimensions (Unit : mm)
TSMT6
Unit
°C
°C
V
V
A
A
A
A
Unit
1pin mark
(6)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Abbreviated symbol : M04
Equivalent circuit
0.95
∗2
(1)
(6)
(1)
(5)
2.9
1.9
0.4
0.95
(2)
(4)
(3)
∗1
Each lead has same dimensions
(5)
(2)
1.0MAX
0.16
0.85
∗1
0.7
0 ~ 0.1
Rev.B
(4)
(3)
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
QS6M4
1/5

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QS6M4 Summary of contents

Page 1

... Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Structure Silicon P-channel MOSFET Silicon N-channel MOSFET Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (2.5V). Applications Load switch, inverter Packaging specifications Package ...

Page 2

... V 15V DD ∗ − − =4.5V 0 ∗ − − =1.5A 0 Min. Typ. Max. Unit ∗ − − =3. 1 QS6M4 Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4.0V GS =2.5V GS =1.0A D 15V DD =10Ω G =10Ω =10Ω Conditions =0V GS Rev.B 2/5 ...

Page 3

... V DD ∗ − − = −4.5V 0 ∗ − − = −1.5A 0. Min. Typ. Max. Unit − − −1.2 = −0.75A / QS6M4 Conditions =0V DS =0V GS =0V GS =−1mA D = −4. −4. −2. −0.75A D −15V DD =10Ω G −15V =10Ω =10Ω Conditions ...

Page 4

... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Pulsed Ta=125°C 1 Ta=75°C Ta=25°C Ta= −25°C 0.1 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M4 6 Ta=25°C =15V =15V V DD =4.5V =1. =10Ω =10Ω Pulsed ...

Page 5

... Gate-Source Voltage 10000 V GS Pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M4 0.5 1.0 1.5 2.0 TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics 10 1 0.1 ...

Page 6

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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