SP8K24 ROHM Co. Ltd., SP8K24 Datasheet

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SP8K24

Manufacturer Part Number
SP8K24
Description
4v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
4V Drive Nch+Nch MOSFET
SP8K24
Silicon N-channel
MOSFET
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
Power switching , DC / DC converter , Inverter
<It is the same ratings for the Tr1 and Tr2.>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW ≤10µs、Duty cycle ≤ 1%
*2 Mounted on a ceramic board
Type
SP8K24
Structure
Features
Packaging dimensions
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
I
I
P
T
DP
T
SP
GSS
I
I
DSS
D
stg
D
S
ch
*1
*1
*2
-55 to +150
Limits
±6.0
±20
±24
150
1.4
45
24
1
2
W / ELEMENT
∗A protection diode is included between the gate and
W / TOTAL
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
∗2
Dimensions (Unit : mm)
SOP8
Unit
(8)
o
o
A
A
(1)
V
V
A
A
C
C
1pin mark
∗1
(7)
(2)
∗2
(6)
(3)
1.27
( 8 )
( 1 )
0.4
∗1
5.0
(5)
(4)
( 5 )
( 4 )
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1.75
0.2
Rev.B
SP8K24
1/4

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SP8K24 Summary of contents

Page 1

... TOTAL 1 ELEMENT o T 150 -55 to +150 C stg SP8K24 5.0 1.75 0 0.2 1.27 Each lead has same dimensions (7) (6) (5) (8) (7) (6) (5) ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate ∗1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (2) (3) ...

Page 2

... R =10Ω G ∗ − 15.4 21 ∗ − − 3 6.0A D ∗ − − 6 4Ω Symbol Min. Typ. - - SP8K24 Conditions =0V DS = 1mA D = 10V 25V 10Ω G Condition Max. Unit I =6.0A/V =0V 1 Rev.B ...

Page 3

... Gate-Source Voltage : V [V] GS Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 1000 t f 100 t d(off) t d(on 100 0.01 0.1 1 Drain Current : I [A] D Fig.8 Switching Characteristics SP8K24 1000 V =4.5V o Ta=125 C GS pulsed -25 C 100 0.01 0.1 1 Drain Current : I [A] D Fig.3 Static Drain-Source On-State Resistance vs ...

Page 4

... R G Fig.12 Gate Charge Test Circuit d(on) Fig.11 Switching Time Waveforms Fig.13 Gate Charge Waveform SP8K24 Pulse Width 90% 50% 50% 10% 10% 10% 90% 90 d(off off Charge Rev.B ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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