SP8K63 ROHM Co. Ltd., SP8K63 Datasheet

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SP8K63

Manufacturer Part Number
SP8K63
Description
4v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet
Transistors
4V Drive Nch+Nch MOSFET
SP8K63
Silicon N-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Switching
<It is the same ratings for the Tr1 and Tr2.>
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Type
SP8K63
Structure
Features
Packaging specifications
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
±20
±28
150
1.6
2.0
1.4
30
±7
28
W/ELEMENT
W/TOTAL
Unit
∗A protection diode is included between the gate and
°C
°C
V
V
A
A
A
A
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
Dimensions (Unit : mm)
Inner circuit
SOP8
(8)
(1)
∗1
(7)
(2)
∗2
(6)
(3)
∗1
(5)
(4)
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
SP8K63
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SP8K63 Summary of contents

Page 1

... S ∗ W/TOTAL ∗2 2 1.4 W/ELEMENT °C Tch 150 −55 to +150 °C Tstg SP8K63 Each lead has same dimensions (8) (7) (6) (5) (8) (7) (6) (5) ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate ∗1 ∗1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) ...

Page 2

... R G ∗ − =7A, 8.5 12 ∗ − − =5V 2 ∗ =2.14Ω, R − − Min. Typ. Max. Unit ∗ − − =7A SP8K63 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =4.5V GS =4.0V GS =10V DS 15V DD V 15V DD =10Ω G Conditions =0V GS 2/4 ...

Page 3

... V GS 1000 C iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.8 Typical Capacitance vs. Drain-Source Voltage SP8K63 100 =10V V GS Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 0.01 0 100 DRAIN CURRENT : I (A) D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙ) 100 Ta=25° ...

Page 4

... Fig.11 Source Current vs. Source-Drain Voltage 50% 10 D.U. d(on Fig.13 Switching Time Waveforms D.U. Fig.15 Gate Charge Waveform SP8K63 Pulse Width 90% 50% 10% 10% 90% 90 d(off off Charge 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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